Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
69 (1996), S. 3375-3377
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present detailed measurements of carrier lifetimes in CuInSe2 thin films. Time-resolved photoluminescence measurements are performed on polycrystalline samples grown with a lateral gradient in the Cu/In ratio, thus enabling continuous evaluation of lifetime dependence on film composition. Luminescence at two distinct spectral positions is observed: A high energy emission, attributed to free carrier or free exciton recombination (depending on composition), that decays extremely fast with a lifetime of tens of picoseconds to a few ns; a lower energy emission from defect related recombination that decays much more slowly, with typical lifetimes greater than tens of nanoseconds. We compare these results with results from CuInGaSe2 films. Radiative coefficients and minority carrier lifetimes are obtained from the data. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.117264
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