Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    The induced charge on a grounded conductor near a point charge (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 575-580 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The induced charge on a grounded arbitrary conductor, excited by a nearby point charge, is shown to be approximated by that on an equivalent conducting sphere near the same point charge. The proof is modified from that for capacitance by Payne and Weinberger [J. Math. Phys. 33, 291 (1955)]. A number of examples for different grounded blocks and plate are given. The potential field distributions from the induced charge are also given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350408
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A novel model of "new donors'' in Czochralski-grown silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 954-957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new model of "new donors'' is presented, based on electrical, infrared measurements, transmission electron microscopy, and high-resolution electron microscopy observations on Czochralski-grown silicon single crystals containing "new donors.'' In this model, the electrical activity of "new donors'' originates from the uncoordinated Si dangling bonds on small dislocation loops resulting from oxygen precipitation. In comparison with other models, the present model can better explain the experimental results of the heat treatment Czochralski-grown Si wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346659
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effect of growth temperature on luminescence and structure of self-assembled InAlAs/AlGaAs quantum dots (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2048-2050 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of growth temperature on the optical properties of self-assembled In0.65Al0.35As/Al0.35Ga0.65As quantum dots is studied using photoluminescence and electroluminescence spectra. With the growth temperature increasing from 530 to 560 °C, the improvement of optical and structural quality has been observed. Furthermore, edge-emitting laser diodes with three stacked InAlAs quantum dot layers grown at different temperature are processed, respectively. For samples with quantum dots grown at 560 °C, the continuous wave operation is obtained up to 220 K, which is much higher than that of ones with InAlAs islands grown at 530 °C and that of the short-wavelength quantum-dot laser previously reported. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388021
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Threshold behavior in backgating in GaAs metal–semiconductor field-effect transistors: Induced by limitation of channel–substrate junction to leakage current (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 511-515 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical model is proposed to understand backgating in GaAs metal–semiconductor field-effect transistors (MESFETs), in which the effect of channel–substrate (CS) junction is included. We have found that the limitation of CS junction to leakage current will cause backgate voltage to apply directly to CS junction and result in a threshold behavior in backgating effect. A new and valuable expression for the threshold voltage has been obtained. The corresponding threshold electric field is estimated to be in the range of 1000–4000 V/cm and for the first time is in good agreement with reported experimental data. More, the eliminated backgating effect in MESFETs that are fabricated on the GaAs epitaxial layer grown at low temperature is well explained by our theory. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364129
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Atomic structure at the LaSi2−x/Si(100) interface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 43-45 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfaces between Si(100) and LaSi2−x lattices formed by rapid thermal annealing at ∼900 °C for 10 s have been studied using high-resolution transmission electron microscopy. The experimental results show that the C axis of the LaSi2−x unit cell points to the 〈332〉Si direction. A model suggesting the {100} planes of LaSi2−x grown on a {113}Si surface has been put forward to account for the observed tilting growth of LaSi2−x disilicide on the Si(100) surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104235
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    High pressure study of graphitization of diamond crystals (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1957-1962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Graphitization of {100} and {111} faces of diamond crystals at pressures of 0.1 and 2 GPa and various temperatures was studied by Raman spectroscopy, x-ray single crystal diffractometry, and scanning electron microscopy. Different primary mechanisms of graphitization are discussed: (a) normal growth of graphite layer by detachment of single atoms from {100} and {111} diamond surfaces and (b) lateral growth of graphite on the {111} surface by breaking off groups of atoms followed by their rearrangement into planar graphitic structures. The growth of oriented graphite crystallites was observed only on the {111} diamond faces and at p=2 GPa. In the case of synthetic diamonds, internal graphitization was observed and explained in terms of catalytic effects on the metal inclusions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1433181
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Polishing-related optical anisotropy of semi-insulating GaAs studied by reflectance difference spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1695-1697 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The strong in-plane optical anisotropy of (001) semi-insulating GaAs, which comes from the submicron region under the surface, has been observed by reflectance difference spectroscopy. The optical anisotropy can be explained by the anisotropic strain that is introduced by the asymmetric distribution of 60° dislocations during surface polishing. The simulated spectra reproduce the line shape of the experimental ones. The simulations show that the anisotropic strain is typically about 2.3×10−4. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373874
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Boron suboxide: As hard as cubic boron nitride (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 643-645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Vickers hardness of boron suboxide single crystals was measured using a diamond indentation method. Under a loading force of 0.98 N, our test gave an average Vickers hardness of 45 GPa. The average fracture toughness was measured as 4.5 MPa m1/2. We also measured the hardness of the cubic boron nitride and sapphire single crystals for comparison. The average measured hardness for boron suboxide was found to be very close to that of cubic boron nitride under the same loading force. Our results suggest that the boron suboxide could be a new superhard material for industrial applications, surpassed in hardness only by diamond and cubic boron nitride. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494860
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Turbulent passive scalar field of a small Prandtl number (1986)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 29 (1986), S. 3586-3589 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The statistical-mechanics theory of the passive scalar field convected by turbulence, developed in an earlier paper [Phys. Fluids 28, 1299 (1985)], is extended to the case of a small molecular Prandtl number. The set of governing integral equations is solved by the equation-error method. The resultant scalar-variance spectrum for the inertial range is F(k)∼x−5/3/[1+1.21x1.67(1+0.353x2.32)], where x is the wavenumber scaled by Corrsin's dissipation wavenumber. This result reduces to the − (5)/(3) law in the inertial-convective range. It also approximately reduces to the − (17)/(3) law in the inertial-diffusive range, but the proportionality constant differs from Batchelor's by a factor of 3.6.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865785
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Inverse energy cascade in two-dimensional turbulence (1986)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 29 (1986), S. 3608-3611 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The closure method developed in earlier papers [J. Qian, Phys. Fluids 26, 2098 (1983); 27, 2412 (1984)] is applied to the study of the inverse energy cascade in two-dimensional turbulence. The resultant inertial-range energy spectrum is E(k)=2.58g0.244ε2/3k−5/3. Here g is a localization factor and ε is the rate of energy cascade. This result is compatible with the numerical experiments by Lilly [D. K. Lilly, Phys. Fluids Suppl. II 12, 24 (1969)], Siggia and Aref [E. D. Siggia and H. Aref, Phys. Fluids 24, 171 (1981)], and Frisch and Sulem [U. Frisch and P. L. Sulem, Phys. Fluids 27, 1921 (1984)].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.865788
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...