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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Al interlayers on growth and magneto-optic properties of MnBi thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 196-201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi/Mn/Al/Bi/Mn multilayers with different Al-interlayer thickness have been deposited on glass substrates at room temperature. The multilayers are not protected by a passivating layer, such as SiOx, in order to investigate the interplay between Al-interlayer thickness and homogeneity, granularity, and topography before and after annealing. Due to the Al interlayer, the diffusion across the Bi/Mn/Al/Bi/Mn stack was reduced as demonstrated by x-ray analysis, scanning electron microscopy, and Rutherford backscattering spectrometry. During annealing, two (MnxBi100−x)100−yAly layers are formed which are separated by an Al interlayer. After annealing, polar Kerr hysteresis loops as measured from the front side of the films show a superposition of two hysteresis loops, opposite in sign, with different coercive fields. The presence of different coercive fields is explained by different granularity of the top and bottom (MnxBi100−x)100−yAly layer. The coercive field of the top (MnxBi100−x)100−yAly layer reaches values up to 1.25 T, while the bottom layer shows a constant value of 0.3 T independent of the Al-interlayer thickness. The opposite sign of the two contributions to the Kerr loops is explained by the different relative index of refraction at the air/(MnxBi100−x)100−yAly and the Al/(MnxBi100−x)100−yAly interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362781
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of Al capping layers on growth, topography, and magnetic properties on MnBi thin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6203-6205 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bi/Mn bilayers have been deposited on fused-quartz substrates at room temperature and annealed at elevated temperatures of 300–380 °C. To investigate the influence of capping layers on MnBi crystallite size and magnetic properties, some of the Bi/Mn bilayers were protected by Al and SiOx layers. The coercive fields of the resulting MnBi films without a protective layer reach values of up to 1.25 T. In case of depositing an Al capping layers prior to annealing, the coercive fields are decreasing strongly showing coercive fields in the range of 0.6 T. In contrast, using SiOx as a capping layer, the Kerr hysteresis loops show a nonlinearity near the coercive field indicating an inhomogeneous film. The change in the coercive field is explained by the influence of capping layers on the MnBi crystallite size during annealing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362072
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  • 3
    Electronic Resource
    Electronic Resource
    Growth and topography study of MnBi films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5391-5394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deposited (Mn/Bi)x bilayers (x=1,2,3) on clean glass substrates at room temperature and at 200 °C without using a protective SiOx layer in order to investigate the interaction between preparation conditions, homogeneity, granularity, and topography. During annealing at temperatures between 280 and 320 °C, no protective SiOx layer on top of the (Mn/Bi)x bilayers influences the formation of MnBi crystallites, i.e., the granularity. The coercive field of the resulting MnBi films is enhanced reaching values of up to 1.25 T. The large coercive fields indicate a single-domain MnBi crystallite size of only 0.2–0.3 μm, which is favorable for a possible application as a magneto-optic storage material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359719
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  • 4
    Electronic Resource
    Electronic Resource
    Temperature dependent resistance of magnetic tunnel junctions as a quality proof of the barrier (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7573-7575 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunnel junctions of Co(10 nm)/AlOx (nominally 2 nm)/Co(20 nm) have been prepared by molecular beam epitaxy applying a shadow mask technique in conjunction with an UV light-assisted oxidation process of the AlOx barrier. The quality of the AlOx barrier has been proven by x-ray photoelectron spectroscopy and temperature dependent tunneling magnetoresistance (TMR) measurements. Optimum-oxidized tunnel junctions show a TMR of 20% at 285 K and up to 36% at 100 K. At 285 K the TMR values as a function of oxidation time are not symmetric about the optimum time. For underoxidized junctions the TMR is reduced more strongly than for overoxidized junctions. The temperature dependence of the junction's resistance is a clear and reliable indicator whether pinholes (or imperfections) contribute to the conduction across the barrier. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361055
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetotransport and magnetic properties of molecular-beam epitaxy L10 FePt thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6854-6856 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetotransport and magnetic properties of chemically ordered (001) L10 FePt epitaxial thin films with small scale perpendicularly magnetized stripe domains have been investigated. Film growth conditions are used to systematically vary the degree of chemical order, the magnetic anisotropy, and magnetic domain sizes. The longitudinal and transverse (Hall) resistivities are correlated with both film chemical order and magnetic properties. The low-field magnetoresistance shows evidence of domain effects. In the highest anisotropy and most chemically ordered film studied, this low field magnetoresistance is consistent with an intrinsic domain wall scattering contribution to the resistivity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372864
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  • 6
    Electronic Resource
    Electronic Resource
    Micromagnetics of mesoscopic epitaxial (110) Fe elements with nanoshaped ends (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5501-5503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal and magnetic domain configurations of 0.5-μm-wide epitaxial (110) Fe particles with rectangular and needle-shaped ends and competing magnetic anisotropies have been investigated. Magnetic force microscopy imaging and longitudinal Kerr hysteresis loop measurements in conjunction with micromagnetic simulations have been used to elucidate the basic micromagnetic behavior. End shape is shown to be a determining factor for the nucleation of magnetization reversal and the resulting magnetic domain configurations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369875
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  • 7
    Electronic Resource
    Electronic Resource
    Micromagnetism and high temperature coercivity of MnBi/Al multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4221-4225 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The micromagnetic properties of multilayered MnBi/Al films have been investigated and compared to pure MnBi thin films. Pure MnBi films reveal an anomalous increase of the high temperature coercivity, which has been explained on the basis of a hybrid domain wall pinning model. The multilayer-type preparation of MnBi/Al thin films results in significantly reduced MnBi particle size of approximately 40 nm. The smaller particle size leads to a change of the dominant magnetization reversal process from one driven by domain wall movement toward coherent rotation. This was investigated via magnetic force microscopy imaging and micromagnetic calculations. The absence of domain walls during magnetization reversal results in a clear suppression of the increase of the high temperature coercivity observed in pure MnBi films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290466
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  • 8
    Electronic Resource
    Electronic Resource
    Extrinsic and intrinsic magnetoresistance contributions of CrO2 thin films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7699-7701 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of (010)-oriented CrO2 thin films on Al2O3(0001) substrates leads to a higher grain boundary density than the growth of (100)-oriented CrO2 thin films on isostructural TiO2(100) substrates. For both types of films an intrinsic linear contribution to the high field magnetoresistance (MR) due to spin disorder has been determined at T=300 K. This contribution does not depend on the crystalline quality of the films and supports the suggested intrinsic double exchange mechanism for CrO2. At low temperature (T=10 K) intergrain tunneling MR and Lorentz MR appear, which strongly depend on the crystalline properties of the CrO2 films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1362658
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  • 9
    Electronic Resource
    Electronic Resource
    Temperature-dependent magnetoresistance of magnetic tunnel junctions with ultraviolet light-assisted oxidized barriers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2026-2028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co(10 nm)/AlOx(nominally 2 nm)/Co(20 nm) tunnel junctions have been prepared under ultrahigh vacuum conditions applying a shadow mask technique. An ultraviolet light-assisted oxidation process of the AlOx barrier has been optimized by in situ x-ray photoelectron spectroscopy, in conjunction with temperature-dependent tunneling magnetoresistance measurements. Optimum-oxidized tunnel junctions show a magnetoresistance of 20% at 285 K, and up to 38% at 100 K. For under-oxidized samples, with a remaining Al layer between the Co bottom electrode and the AlOx barrier, the tunneling magnetoresistance decreases more rapidly with increasing temperature than observed for the over-oxidized samples. The resistance × area product of optimum-oxidized tunneling junctions exhibits a minimum, and increases for under- and over-oxidized samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361098
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  • 10
    Electronic Resource
    Electronic Resource
    Size dependence of the exchange bias field in NiO/Ni nanostructures (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3815-3817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: NiO/Ni wires have been investigated as a function of their width in order to investigate the size dependence of exchange bias. The samples have been prepared by e-beam lithography and ion milling of ion beam sputtered thin films. For NiO/Ni wires narrower than 3 μm, the exchange bias field significantly depends on the wire width. A NiO/Ni film shows an exchange bias field of −78 Oe whereas the exchange bias field of wires narrower than 200 nm is reduced to approximately −40 Oe. The coercive field of the NiO/Ni film is 28 Oe and increases to 210 Oe for the narrowest wires. The decrease of the exchange bias field for the narrowest wires is consistent with a recent microscopic model of exchange bias where the appearance of a unidirectional anisotropy in ferromagnet/antiferromagnet bilayers has been attributed to the presence of antiferromagnetic domains in the bulk of the antiferromagnet. A possible onset of a transition from a multidomain to a single-domain state of the antiferromagnet as a function of the NiO/Ni wire width seems to be the origin for the observed decrease of the exchange bias field for narrow wires. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330752
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