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  • 1
    Electronic Resource
    Electronic Resource
    5-THz bandwidth from a GaAs-on-silicon photoconductive receiver (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7022-7024 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that GaAs grown by molecular beam epitaxy on silicon has ideal characteristics for THz receiver applications. The lattice mismatch between silicon and GaAs causes a disordered growth of GaAs, reducing the carrier lifetime to 1.8 ps. This is similar to the characteristics observed in low temperature grown GaAs. Furthermore, the high resistivity silicon substrate has a very low absorption and dispersion in the far infrared. This makes it an ideal material in THz system applications, and we show that a maximum frequency of 5 THz and a sixfold increase in sensitivity can be obtained using a GaAs-on-silicon based THz detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355040
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  • 2
    Electronic Resource
    Electronic Resource
    Band-gap dynamics and nonlinear propagation of optical pulses in CdTe (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1815-1819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nonlinear propagation of picosecond pulses in CdTe is investigated. First, the band-gap dynamics is studied in the presence of a dense electron-hole plasma using time-resolved luminescence in the picosecond regime. Good agreement is found between experimental results for band-gap shrinkage and theory for densities of 5×1016–4×1017 cm−3. Second, the nonlinear transmission of optical pulses through CdTe/CdZn0.04Te0.96 heterostructures is investigated for photon energies close to the unexcited band gap. We demonstrate that, depending on the energy of the incident pulse, induced transmission or induced absorption takes place: Self-induced transmission is caused by band filling at high intensity E of the incident pulses (E(approximately-equal-to)100–200 μJ/cm2). Self-induced absorption is observed at relatively low incident intensity (E(approximately-equal-to)15–20 μJ/cm2). This effect is related to the band-gap shrinkage of the CdTe epilayer in the presence of a nondegenerate electron-hole plasma. A transmission theory of picosecond pulses propagating in and exciting the sample simultaneously is developed and provides a qualitative description of the experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346615
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  • 3
    Electronic Resource
    Electronic Resource
    Bandwidth enhancement of a shear-force-controlled distance regulation in near-field microscopy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 100-106 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distance between sample and probe in a scanning near-field optical microscope is regulated via tracing the shear-force on the tip which is glued to a tuning fork piezo. A lock-in technique is used. We demonstrate that the bandwidth of the control loop is increased if not only amplitude or phase, but a favorable combination of both is used as feedback signal. The enhancement of bandwidth is connected with a reduction of signal-to-noise ratio. The optimum combination of both, bandwidth and signal-to-noise ratio, can be adjusted purely electronically to the specific needs of an experiment. A theoretical model is developed that discloses the relation between the mechanical and electrical properties of the combination of tuning fork and fiber tip. The frequency response of the shear-force detection system is calculated with a numerical simulation based on this model. Experimental frequency response curves are well fitted by these simulations. Our results are especially important for low-temperature scanning microscopy, where the bandwidth enhancement is essential for obtaining a reasonable scanning speed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370705
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  • 4
    Electronic Resource
    Electronic Resource
    Band-to-band recombination in Ga0.5In0.5P (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8204-8206 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination kinetics of the electron-hole plasma in strongly excited, undoped Ga0.5In0.5P are investigated at 300 and 150 K by time-resolved photoluminescence measurements using line-shape analysis of transient spectra. Radiative recombination dominates, and no influence of the Auger effect is observed up to our highest carrier concentration of 1.5×1019 cm−3. Random alloy and ordered samples have the same recombination rate. The radiative recombination coefficients are found to be (1.0±0.3)×10−10 and (4±1)×10−10 cm3 s−1 at 300 and 150 K, respectively. An upper limit for the Auger coefficient is 3×10−30 cm6 s−1 at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356522
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  • 5
    Electronic Resource
    Electronic Resource
    Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 156-158 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the emission dynamics of two In0.2Ga0.8As/GaAs microcavity lasers after femtosecond optical excitation at 20 K. The pulse widths and the peak delays of λ and a 2λ cavity are compared. Pulses as short as 3.3 ps (9.5 ps) and peak delays as short as 8.2 ps (16.5 ps) are obtained with the 2λ cavity (λ cavity). The pulse widths and peak delays are well described by a model based on a rate equation analysis for carrier and photon densities; in particular, the better high speed characteristics of the 2λ cavity compared to the λ cavity are well reproduced. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116132
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  • 6
    Electronic Resource
    Electronic Resource
    Nonresonant electron and hole tunneling times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 355-357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonresonant carrier tunneling is investigated by time-resolved and time-averaged optical methods for a series of samples with various barrier thicknesses. The electron tunneling times decrease exponentially with the decrease of barrier thickness from 8 to 3 nm, and the trend is well described by a semiclassical model. Additional efficient hole tunneling is observed in the 3 nm barrier sample, and the time constant is of the order of 50 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102783
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  • 7
    Electronic Resource
    Electronic Resource
    Γ- and X-band contributions to nonresonant tunneling in GaAs/Al0.35Ga0.65As double quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2517-2519 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence in the picosecond regime is performed on an asymmetric GaAs/Al0.35Ga0.65As double quantum well structure with a barrier thickness of 6 nm to obtain the Γ- and X-point barrier contributions to nonresonant tunneling. Application of hydrostatic pressure up to 37 kbar at 5 K reveals that tunneling via virtual X states is at least 800 times less efficient than via virtual Γ states. Above 24.5 kbar an extremely fast scattering of electrons out of the n=1 quantized level of the narrower quantum well is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101994
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  • 8
    Electronic Resource
    Electronic Resource
    Time-resolved measurements of tunneling between double quantum wells in In0.53Ga0.47As/InP (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 885-887 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling of electrons between double quantum wells is investigated by time-resolved photoluminescence in the picosecond regime. The samples contain two In0.53Ga0.47As quantum wells with different widths, separated by various InP barriers. At low excitation density, the luminescence decay time of the narrower quantum well depends strongly on the thickness of the barrier, revealing the lifetimes to be tunneling controlled. A semiclassical model explains the observed nonresonant tunneling escape times. With increasing density, the luminescence decay time of the narrower quantum well strongly increases and finally saturates due to effective mass filtering, which leads to a lineup of the electron levels in both wells and resonant tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101615
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  • 9
    Electronic Resource
    Electronic Resource
    Cooling of hot carriers in Ga0.47In0.53As (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 673-675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier cooling is measured in an Al0.48In0.52As/Ga0.47In0.53As/InP heterostructure by time-resolved photoluminescence experiments for excitation densities between 5×1016 and 2.2×1018 cm−3. For low excitation density, the energy-loss rate by emission of optical phonons is close to theoretical bulk value, whereas a reduction of the energy-loss rate by a factor of 100 is found for the highest excitation density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98330
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical and optical time-of-flight experiments in GaAs/AlAs superlattices (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2656-2658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of electron transport by sequential resonant and nonresonant tunneling along the growth direction of tight-binding GaAs/AlAs superlattices is studied by electrical time-of-flight experiments and by time-resolved photoluminescence. In the limit where the decay time of the photoluminescence is determined by transport (and not by recombination), we observe structures in the field dependences of both the optical and electrical response times which are related to resonances between different electronic subbands of adjacent wells. Here the time-resolved photoluminescence and the electrical time-of-flight experiment provide independent tools to investigate the dynamics of the conduction processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101026
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