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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 605 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 0020-1693
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Pesticide Biochemistry and Physiology 43 (1992), S. 241-252 
    ISSN: 0048-3575
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Agriculture, Ecosystems and Environment 48 (1994), S. 263-271 
    ISSN: 0167-8809
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Cell Biology International Reports 6 (1982), S. 917-923 
    ISSN: 0309-1651
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1687-1694 
    ISSN: 0392-6737
    Keywords: Methods of crystal growth and purification
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono stati preparati cristalli singoli di AgInS2 e AgInSe2 mediante trasporto chimico con iodio e con il metodo di Bridgman. Sono state effecttuate anche sintesi delle leghe quaternarie AgInSe2(1−x)Se2x. Le separazioni delle bande di valenza piú alte del AgInS2 ortorombico sono state determinate dallo spettro di fotoconduttività. Si presentano i parametri del reticolo, la banda proibita, la suscettività magnetica e il punto di fusione di tutti i materiali.
    Abstract: Резюме Приготовляются монокристаллы AgInS2 и AgInSe2, исполъзуя метод транспорта иода и метод Бридгмана. Также проводится синтез четярехкомпонентнях сплавов AgInSe2(1−x)S2x. Из спектра фотопроводимости определяются расцепления верхних валентных зон в орторомбическом AgInS2. Приводятся параметры рещетки, щирина запрещенной зоны, магнитная воспримчивостъ и точка плавления для всех соединений.
    Notes: Summary AgInS2 and AgInSe2 single crystals have been prepared by chemical transport with iodine and by the Bridgman method. Syntheses of the quaternary alloys AgInSe2(1−x)S2x have also been carried out. The splittings of the uppermost valence bands in orthorhombic AgInS2 have been determined from the photoconductivity spectrum. The lattice parameters, the energy gap, the magnetic suceptibility and the melting point of all the materials are presented.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1728-1735 
    ISSN: 0392-6737
    Keywords: Phase diagram and microstructures developed by solidification and solid-solid phase transformations
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto La variazione dei parametri del reticolo da temperature ambiente al punto di fusione del composto è stata studiata per semiconduttori tipo calcopirite CuGaSn□Se4 usando una macchina fotografica a raggi X ad alta temperatura. Il composto mostra un aumento nella forma tetragonale dell'espansione termicaα c . I risultati sono interpretati in termini dell'espansione dei legami. La misura di DTA, che ha mostrato un picco a 590°C, è stata associata con la decomposizione del quaternario in due fasi. Alla temperatura di 590°C, apparvero linee addizionali nelle misure a raggi X a valori di θ di 15.3133o, 18.8235o, 21.0230o, 24.5633o, 26.3712o e 34.7926o. Queste linee addizionali (di seconda fase) derivano probabilmente dal SnSe2.
    Abstract: Резюме Исследуются изменения параметров решетки с температурой, от комнатнои температуры до точки плавления соединения, для халькопиритных полупроводников CuGaSn□Se4, используя высокотемпературную рентгеновскую камеру. Это соединение обнаруживает увеличение тетрагонального теплового расширенияα c . Результаты интерпретируются в терминах растяжения связей. Пик, обнаруженный при 590°C, связан с разложением четырехкомпонентного соединения на две фазы. При температуре 590°C появляются дополнительные линии в рентгеновских измерениях величины θ 15.3133o, 18.8235o, 21.0230o, 24.5633o, 36.3712o, и 34.7926o. Зти новые дополнительные линии (вторая фаза), по-видимому, связаны с SnSe2.
    Notes: Summary The variation of the lattice parameters, from the room temperature to the melting point of the compound, has been studied for the chalcopyrite semiconductor CuGaSn□Se4 by using a high-temperature X-ray camera. The compound shows an increase in the tetragonal of thermal expansionα c . The results are interpreted in terms of expansion of the bonds. The DTA measurement, that has shown a peak at 590°C, has been associated with the decomposition of the quaternary into two phases. At the temperature of 590°C extra lines appeared in the X-ray measurements of θ values of 15.3133o, 18.8235o, 21.0230o, 24.5633o, 26.3712o and 34.7926o. These new extra lines (second phase)_are probably from SnSe2.
    Type of Medium: Electronic Resource
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