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  • 1
    Electronic Resource
    Electronic Resource
    Comparison of nonlinear and nonstationary response of conventional and resonant cavity enhanced p-i-n photodiode (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3086-3092 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power illumination of a p-i-n photodiode results in nonlinear operating conditions and, of course, in nonlinear electric response. This article presents an investigation and comparison of the nonlinear response of conventional and resonant cavity enhanced (RCE) p-i-n photodiodes constructed using a two-valley semiconductor (GaAs). The presented results are obtained through numerical simulation of the complete phenomenological model for a two-valley semiconductor in the submicron region for several bias voltages and several values of Dirac pulse optical powers. The nonlinear behavior is analyzed through carrier transit and response time. Nonstationary effects exist in two-valley semiconductors in the presence of adequate perturbation of the electric field in the absorption layer. The present investigation shows that the RCE p-i-n photodiode reaches the nonlinear operating regime for smaller incident optical irradiances. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372304
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization and Optimization of a Resonant Cavity Enhanced P-i-N Photodiode Response (1999)
    Springer
    International journal of infrared and millimeter waves 20 (1999), S. 109-123 
    Details
    ISSN: 1572-9559
    Keywords: bandwidth ; linear response ; P-i-N photodiode ; quantum efficiency ; Resonant Cavity Enhanced photodiode
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper presents linear pulse response of a Resonant Cavity Enhanced (RCE) P-i-N fotodiode. The RCE P-i-N photodiode designed for high-speed aplication is analysed for various submicron thicknesses of absorption layer, bias voltages, active areas and incident pulse optical excitations. The results are obtained by numerical simulation of the complete phenomenological model for two valley semiconductor. Great enhancement of the quantum efficiency and the product bandwidth-quantum efficiency, is obvious from obtained results for this photodiode type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1021759819446
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    An analytical expression for the electric field in MSM structures (1993)
    Springer
    International journal of infrared and millimeter waves 14 (1993), S. 1485-1493 
    Details
    ISSN: 1572-9559
    Keywords: Conformal mapping ; MSM structure ; Photodetector ; Electrooptic modulator
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this work the conformal mapping is used to determine an analytical expression for the electric field in MSM structures. The expression simplifies the analysis of optically generated carriers transport, i.e. the determination of the response of the MSN photodetectors. It can also be useful in the analysis of MSM electrooptical modulators operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02084421
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of electron intervalley transfer on response pulse width of the MSM photodetector (1996)
    Springer
    International journal of infrared and millimeter waves 17 (1996), S. 1001-1009 
    Details
    ISSN: 1572-9559
    Keywords: MSM photodetector ; electron intervalley transfer ; pulsewidth
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract This paper analyses the influence of nonstationary effects on response pulswidth of Metal-Semiconductor-Metal Photodetector (MSM-PD) made of a two-valley semiconductor. A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. The analysis of the pulsewidth response of the MSM-PD has been made for various micron and submicron structures, bias voltages and incident light wavelengths.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02101431
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  • 5
    Electronic Resource
    Electronic Resource
    APPLICATION OF CONFORMAL MAPPING IN MODELLING THE RESPONSE OF AN MSM PHOTODETECTOR (1997)
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 10 (1997), S. 71-82 
    Details
    ISSN: 0894-3370
    Keywords: Engineering ; Numerical Methods and Modeling
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: In this paper we present an efficient method for numerical solution of the transport equation of photogenerated carriers in MSM photodetectors. The method is based on conformal mapping of both the MSM photodetector structure and the system of transport equations into a new space. The mapping enables analytical calculation of the electric field, allowing one to take one of the co-ordinates as a parameter and thus reducing the problem to quasi-one-dimensional. In addition, the method of conformal mapping enables calculation of the normalized current response of a photodetector in the new space. © 1997 by John Wiley & Sons, Ltd.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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