ISSN:
0894-3370
Keywords:
Engineering
;
Electrical and Electronics Engineering
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Simulation results for a n+-n-n+ two-valley semiconductor device obtained by use of a shock capturing numerical agorithm are presented. The one-dimensional problem is modelled by two systems of Euler equations connected by their source terms, and the Poisson equation. The resulting system of seven equations is hyperbolic and non-linear, and it is a great problem to find an adequate numerical approximation of its time-dependent discontinuities. There are additional complications due to the stiffness of the source terms.The numerical method used in this paper is first-order acurate in time but of high spatial order in regions of smoothness. Before the method is applied, the system has to be transformed to a characteristic form. The adopted shock capturing algorithm enables the choice of the order of the accuracy by the appropriate choice of the reconstruction polynomial. Reconstructions of the second and fourth order are tested and some numerical results are presented. Because of the stiffness of the source terms, the sixth-order accurate scheme breaks down. The results presented, and especially the response obtained of the structure to the step and periodic applied voltage, prove the correctness of the used schemes.
Additional Material:
10 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/jnm.1660070403
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