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  • 1
    Electronic Resource
    Electronic Resource
    Focused ion beam assisted chemically etched mesas on GaAs(001) and the nature of subsequent molecular beam epitaxial growth (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 859-864 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam assisted chemical etching is examined as an ultrahigh vacuum compatible in situ direct-write approach to patterning substrates to create mesas with arbitrary shapes (i.e., sidewall angles) independent of crystallographic orientation. Ga+ ion beam assisted Cl2 etching of GaAs(001) is employed as a vehicle. A phenomenological model is used to predict mesa profiles as a function of ion beam conditions. Mesas created under various conditions are characterized via atomic force microscopy and good agreement is found between the measured and predicted profiles. Examination of the growth profile evolution on such mesas with as-patterned sidewall angles between ∼10° and ∼60° reveal that mesa top size reduction suitable for nanostructure fabrication on stripes oriented along the [11¯0] and [100] directions occurs only for as-patterned mesa sidewall angles greater than ∼19° and ∼45°, respectively, which are the angles subtended by the {114} and {101} facets that emerge during growth and cause mesa top pinch-off for the two mesa stripe orientations, respectively. An as-patterned surface roughness in the sidewall and valley regions of ∼20 nm is found to heal with typically ∼50 nm of GaAs buffer growth via molecular beam epitaxy. Cross-section transmission electron microscope studies evidence the high quality of growth on the mesas and the lack of extended defects in the as-patterned substrate as well as in the overlayers, thus making such in situ prepared mesas suitable for creation of nanostructures via the technique of size-reducing epitaxy. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365785
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  • 2
    Electronic Resource
    Electronic Resource
    Mass transfer in Stranski–Krastanow growth of InAs on GaAs (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 640-642 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a quantitative study of the evolution of the material contained in two- and three-dimensional (2D and 3D) surface features during the 2D–3D morphology transition in highly strained growth, using InAs/GaAs(001) as the vehicle. The results establish a varying mass transfer between 2D and 3D surface features with increasing InAs deposition. Quasi-3D (0.6–1.2 nm high) clusters are seen to mediate the 2D–3D morphology change and to play an important role in the mass redistribution on the surface. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118848
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  • 3
    Electronic Resource
    Electronic Resource
    In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3299-3301 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The size evolution of molecular beam epitaxy-grown strained InAs three-dimensional (3D) islands on GaAs(001) is examined using in situ ultrahigh vacuum atomic force microscopy. Remarkably, just after the initiation of well-formed 3D islands at ∼1.57 ML InAs deposition, the lateral size dispersion and average value are found to first increase drastically with the smallest amount (∼0.05 ML) of additional InAs deposition and then decrease and saturate, indicating the onset of a natural tendency for size equalization, including through loss of material from the initially formed largest islands. These observations are found to be consistent with the previously suggested island-separation dependent influence of the evolving island-induced substrate strain fields on the adatom migration and incorporation/detachment kinetics that control the evolution of the islands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116580
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: "Mass transfer in Stranski–Krastanow growth of InAs on GaAs" [Appl. Phys. Lett. 70, 640 (1997)] (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3169-3169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119270
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  • 5
    Electronic Resource
    Electronic Resource
    Serrated yielding in an Al—3wt% Mg alloy with trace additions of indium, cadmium and tin (1986)
    Springer
    Journal of materials science 5 (1986), S. 93-95 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01671450
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  • 6
    Electronic Resource
    Electronic Resource
    Pre-precipitation in Al-0.1 wt % Cr alloy (1978)
    Springer
    Journal of materials science 13 (1978), S. 1136-1138 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00544713
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  • 7
    Electronic Resource
    Electronic Resource
    Kinetics of precipitation in Al-1 wt% Mn alloy (1981)
    Springer
    Journal of materials science 16 (1981), S. 2544-2550 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Precipitation kinetics in high purity Al-10 wt% Mn alloy has been investigated during the early stages of isothermal annealing between 823 and 698 K by resistivity measurements. Aged specimens were also examined by transmission electron microscopy. The precipitation kinetics can be represented by an Avrami type equation with the time exponentn=2/3 during the early stages of annealing. This can be attributed to the nucleation and growth of fiat needle-like precipitates on dislocations. The precipitates were Al6 Mn at ⩾ 773 K and the metastable G2 -phase at ⩽ 773 K. After prolonged annealing times at 848 K, isometric plates of Al6Mn were also observed and the value ofn was found to be 1.0. However, at 698 K after longer annealing times, isometric needles of Al12Mn, G-phase were observed along with flat needles of G2 precipitate. At 698 K, the value ofn tends to decrease with time from 0.67 to 0.59.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01113594
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  • 8
    Electronic Resource
    Electronic Resource
    Splat cooling of aluminium-manganese alloys (1974)
    Springer
    Journal of materials science 9 (1974), S. 1759-1763 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The gun technique of splat cooling is utilized to extend the solid solubility of manganese in aluminium by a factor of four above that at the eutectic temperature. The supersaturated solid solutions can be retained up to 250° C without any significant decomposition. Isochronal and isothermal studies of the variation of the lattice parameter of the 6.4 wt % manganese solid solution yield a value for the activation energy of 30 kcal mol−1 which is considerably higher than that for the splat cooled aluminium-silicon alloys. The decomposition of the supersaturated solid solution leads to the precipitation of the equilibrium Al6Mn phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00541743
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  • 9
    Electronic Resource
    Electronic Resource
    Short range order in Cu-Al alloys containing 〉16 at% Al (1984)
    Springer
    Journal of materials science 3 (1984), S. 100-104 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00723087
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  • 10
    Electronic Resource
    Electronic Resource
    Homogenization of commercial Al-Mn alloys (1984)
    Springer
    Journal of materials science 3 (1984), S. 605-610 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00719624
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