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  • 1
    Electronic Resource
    Electronic Resource
    Relationship of the gold related donor and acceptor levels in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2714-2716 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relation between gold related levels in silicon is studied with deep level transient spectroscopy (DLTS) using linearly graded junctions. Since the depletion layer extends equally on both sides in the linearly graded junction, both the acceptor level in the upper half and the donor level in the lower half of the band gap are simultaneously monitored as majority-carrier traps. It is observed that the concentration of the acceptor level is about four times more than the donor level. The defect concentrations have been calculated using modified DLTS theory for linearly graded junctions where the influence of free-carrier tail has been properly considered for both the traps. The difference in concentrations indicates that the two deep levels originate from different configurations of the gold impurity in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348622
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction of gold-related and irradiation-induced defects in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8205-8209 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evidence of interaction of gold-related defects with irradiation-induced defects in silicon is presented. It is observed that the concentrations of both the gold-related levels increase with increasing dose of irradiation. The linear relation between gold-related acceptor concentration NAu and the divacancy NV-V suggests that the gold-related level is a gold-divacancy complex rather than gold-vacancy complex.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347423
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  • 3
    Electronic Resource
    Electronic Resource
    Gray track formation in KTiOPO4 by swift ion irradiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6560-6562 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Potassium titanyl phosphate single crystals were irradiated with 48 MeV lithium ions at fluences varying from 5×1012 to 1016 ions/cm2. The defects created in the crystal have been characterized using x-ray rocking curve measurements, optical transmittance, and photoluminescence spectroscopy. From x-ray rocking curve studies, the full width at half maximum for the irradiated samples was observed to increase, indicating lattice strain caused by the energetic ions. Optical transparency of these samples was found to decrease upon irradiation. The irradiated samples exhibited a broadband luminescence in the 700–900 nm region, for fluences above 5×1013 ions/cm2. The results indicate that ion-beam-induced optical effects in KTiOPO4 single crystals are very similar to the ones obtained for crystals with "gray tracks," which are attributed to the electronic transitions in the Ti3+ levels. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1347949
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of ruthenium passivation on the optical and electrical properties of gallium antimonide (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4825-4827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improvements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30–40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359407
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of hydrogenation and thermal annealing on the photoluminescence of p-InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5398-5405 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of hydrogenation and thermal annealing on the photoluminescence (PL) of InP:Mg and InP:Zn is presented. On hydrogenation, a rise in near-band-edge PL intensity by a factor of 16 for the InP:Mg sample and a factor of 50 for the InP:Zn sample is observed and this is attributed to the passivation of nonradiative centers. A donor–acceptor pair transition before hydrogenation in the InP:Mg sample and after hydrogenation in the InP:Zn sample was observed. In both cases, the magnitude of the shift in peak position with excitation intensity shows the involvement of a donor deeper than the normally present shallow donors. The ionization energy of the donor in InP:Mg is estimated to be 48 meV and that in InP:Zn is estimated to be 〈40 meV. No hydrogenation induced radiative transitions were observed. In the InP:Mg samples, the acceptor passivation effects are lost after annealing at a temperature of 350 °C for 2 min, whereas the nonradiative center passivation after hydrogenation is not completely lost. In InP:Zn, the acceptor passivation along with nonradiative and deep center passivation are lost after an annealing treatment of 300 °C for 2 min. A thermally induced D–A pair emission in InP:Zn which moves to lower energies with increasing annealing temperature is observed. Such a transition is not observed for InP:Mg. This can be either due to a preferential pairing of the donor and acceptor which becomes randomized after the heat treatment or due to the removal of hydrogenation effects by annealing. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359230
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  • 6
    Electronic Resource
    Electronic Resource
    The fluorescence of Nd3+ in lead borate and bismuth borate glasses with large stimulated emission cross section (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4845-4853 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stimulated emission cross section σp for the 1060 nm transition of Nd3+ in lead borate and bismuth borate glasses has been determined from fluorescence measurements. The compositional dependence of σp, which has been evaluated using radiative transition probability, refractive index of the host glass, effective fluorescence linewidth, and position of the band, with PbO/Bi2O3 content is investigated. The σp values of the 1060 nm band of Nd3+ for lead borate and bismuth borate glasses are found to be in the range 2.6–5.7×10−20 cm2 at 298 K and 3.0–6.3×10−20 cm2 at 4.2 K. The σp values are comparatively large suggesting the possible utilization of these materials in laser applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363520
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  • 7
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity on ion irradiated carbon films prepared by plasma assisted chemical vapor deposition and determination of traps in the pseudo-gap region (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2079-2081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defects created by ion beam irradiation in disordered conducting carbon films have been studied by the photoconductivity technique. A very complex distribution of traps created mostly by random displacement of carbon atoms by energetic ion beam from its polymeric matrix showed a persistent photoconductivity at low temperature. The decay time constant estimated from the photocurrent is around 15 s at 10 K. From the time constant and the intensity of photocurrent the density of traps and the corresponding activation energies are calculated. This report shows how slow decay of photocurrent can be applied to probe distribution of traps in the amorphous carbon due to ion bombardment in the most general case. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115590
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  • 8
    Electronic Resource
    Electronic Resource
    Fine structure in 1.4 eV luminescence band from plasma deposited amorphous silicon layers on silicon substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1458-1460 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fine structure has been observed in the 1.4 eV luminescence band of thin (≈100 A(ring)) amorphous silicon (a-Si:H) layers deposited on silicon substrates. The energy separation between the peaks is ≈20 meV. A similar luminescence band observed in layers grown on glass substrates under the same conditions is several orders of magnitude lower in intensity and is without perceptible fine structure. There is no change in the nature of the fine structure and the peak energies in films deposited at different substrate temperatures (150–300 °C). The dependence of the luminescence band on illumination intensity and on temperature has also been measured. This indicates probable excitonic nature of the luminescence. Possible causes for the observed phenomena are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116253
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  • 9
    Electronic Resource
    Electronic Resource
    Donor-related deep level in bulk GaSb (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1412-1414 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy (DLTS) and thermally stimulated capacitance (TSCAP) studies on bulk grown tellurium- selenium-, and sulphur-doped gallium antimonide reveal the presence of deep level intrinsic of the dopant species. The trap densities in Te- and Se-doped samples were found to be at least two orders of magnitude lower than the shallow donor concentration. Interestingly, the DLTS spectrum of S:GaSb exhibits DX-like nature with the trap concentration comparable to that of shallow donor concentration. However, the Te and Se related levels do not exhibit DX-like nature. The DLTS and TSCAP results are in good agreement with each other.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112975
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  • 10
    Electronic Resource
    Electronic Resource
    Critical impeller speed for solid suspension in mechanically agitated three-phase reactors. 1. Experimental part (1991)
    s.l. : American Chemical Society
    Industrial & engineering chemistry research 30 (1991), S. 1770-1784 
    Details
    ISSN: 1520-5045
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ie00056a013
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