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  • 1
    Electronic Resource
    Electronic Resource
    Voltage shifts and imprint in ferroelectric capacitors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 866-868 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Voltage offsets in the polarization-voltage characteristics of Pb(Zr,Ti)O3 capacitors can be induced by either thermal or optical processes. The thermally (optically) induced voltage shift occurs by heating (illuminating) the sample under remanence or a saturating bias. Generally speaking, the thermally induced voltage shifts are greater than those obtained optically; this is attributed to the role of oxygen vacancy-related defect dipoles throughout the film. We find that the inclusion of a dopant element that occupies a portion of the Ti(Zr) sites and has an oxidation state greater than +4 reduces the thermally induced voltage shifts observed in the capacitors. This may result because these particular dopants reduce the oxygen vacancy density and, hence, the defect-dipole contribution to the voltage shift. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115531
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2540-2542 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the thermally activated hysteresis relaxation effects in (La,Sr)CoO3/ (Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 thin film ferroelectric capacitors. Films cooled in oxygen deficient ambients exhibit a marked voltage offset in the hysteresis loops. Upon the application of a dc bias voltage or unidirectional pulses of the same polarity as the offset, the loops become more symmetric. Subsequently, holding the capacitors in the original preferred polarization state leads to a relaxation of the hysteresis loop towards its original voltage offset condition. The relaxation process is described by a stretched exponential and is thermally activated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117732
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  • 3
    Electronic Resource
    Electronic Resource
    Low temperature processing of Nb-doped Pb(Zr,Ti)O3 capacitors with La0.5Sr0.5CoO3 electrodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 272-274 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of crystallization temperature on the electrical properties of sol-gel derived Pb(Zr,Ti,Nb)O3 or PNZT capacitors with La0.5Sr0.5CoO3 (LSCO) electrodes has been investigated. It is demonstrated that LSCO//PNZT(4/30/70)//LSCO capacitors can be fabricated at temperatures as low as 550 °C without significant degradation in their ferroelectric and dielectric properties. Lowering the process temperature to 500 °C resulted in substantial degradation in capacitor properties. Nonetheless, all capacitors processed in the 500 °C to 675 °C range exhibited essentially no fatigue up to 5×109 switching cycles. The low temperature processing is significant as it indicates that this ferroelectric capacitor technology is compatible with high density nonvolatile memory architectures. In other words, these process temperatures are low enough to maintain plug integrity and to prevent degradation of the underlying CMOS circuitry in a high density ferroelectric memory. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115660
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    Paper (German National Licenses)
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