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  • 1
    Electronic Resource
    Electronic Resource
    Radiative and nonradiative rates and deep levels in zinc selenide grown by molecular-beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1731-1736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of chlorine-doped epitaxial layers of ZnSe have been grown by molecular-beam epitaxy. Measurements have been made of the relative intensity of the blue photoluminescence at room temperature, of the decay time of this emission, and of the concentrations of deep levels determined by photocapacitance techniques. A GaAs buffer layer improves the light emission and decreases the deep-level concentrations. Over the uncompensated donor concentration range 2×1016 to 3×1018 cm−3 the photoluminescence intensity, decay rate, and deep-level concentrations only vary by one order of magnitude. The results are consistent with the room-temperature blue emission resulting in recombination of a free hole with electrons on relatively isolated donors, this radiative recombination competing with a strong nonradiative Hall–Shockley–Read recombination via deep levels in the lower half of the energy gap. The significance of these results for the making of light-emitting diodes and lasers is discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360202
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Three-dimensional imaging of a silicon flip chip using the two-photon optical-beam induced current effect (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 7-9 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe two- and three-dimensional imaging of a flip-chip silicon integrated circuit using backside optical probing and femtosecond two-photon excitation at a laser wavelength of 1.275 μm. Using a ×50 microscope objective, we typically achieved micron resolutions or better in both lateral and axial directions. Using axial scanning and a peak-detection algorithm we have demonstrated optical depth profiling across components on the chip. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1491301
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  • 3
    Electronic Resource
    Electronic Resource
    Ti:Sapphire-pumped femtosecond optical parametric oscillators based on KTiOPO4 and RTiOAsO4 (1995)
    Springer
    Applied physics 60 (1995), S. 437-442 
    Details
    ISSN: 1432-0649
    Keywords: 42.55 ; 42.65 ; 42.60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The design, configuration and operation of Ti:Sapphire-laser-pumped femtosecond Optical Parametric Oscillators (OPOs) using KTP and RTA are described. The results presented include configurations capable of producing transform-limited pulses shorter than 40 fs and operating with pump powers as low as 50 mW. Tunability within the 1–3 µn spectral region is demonstrated using pump-tuning alone.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01081323
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    Paper (German National Licenses)
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