Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Defining the structure of the human high-affinity receptor for IgE, FcεRI, is crucial to understand the receptor:ligand interaction, and to develop drugs to prevent IgE-dependent allergic diseases. To this end, a series of four anti-FcεRI monoclonal antibodies (mAbs), including three new mAbs, 47, 54, and 3B4, were used in conjunction with synthetic FcεRI peptides to define functional regions of the Fc IgE-binding site and identify an antagonist of IgE binding. The spatial orientation of the epitopes detected by these antibodies and their relationship to the IgE-binding region of FcεRI was defined by a homology model based on the closely related FcγRIIa. Using recombinant soluble FcεRI-α as well as FcεRI-α expressed on the cell surface, a series of direct and competitive binding experiments indicated that the mAbs detected nonoverlapping epitopes. One antibody (15-1), previously thought to be located close to the IgE-binding site, was precisely mapped to a single loop within the IgE-binding site by both mutagenesis and overlapping synthetic peptides encompassing the entire extracellular domain. A synthetic peptide εRI-11, containing the amino acids 101–120 and the mAb 15-1 epitope, inhibited IgE binding and may form the basis for the development of a useful receptor-based therapy.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3189-3191 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective etching of InP and InGaAsP over AlInAs was obtained using CH4/H2 reactive ion etching without the addition of a fluorine containing gas. By tuning the methane-to-hydrogen ratio, pressure, and power, sputter desorption of the reacted AlInAs etch products can be inhibited, thus enabling AlInAs to be used as an etch stop layer. The use of a fluorine free mixture enables dielectrics such as silicon dioxide or nitride to be used as the masking material.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 212 (1966), S. 177-177 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The pattern in Fig. la was produced by depositing cadmium metal on an image formed by ultra-violet light from a 200 W arc lamp. The lamp illuminated a metal mask 2 in. in diameter, a part of which is shown in Fig. 16. A quartz lens 1-5 in. in diameter and of 7 in. focal length was arranged so that ...
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...