ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The properties of silicon structures with silicon carbide (SiC) buried layers produced by high-dose carbon implantation followed by a high-temperature anneal are investigated by Raman and infrared spectroscopy. The influence of the coimplantation of oxygen on the features of SiC buried layer formation is also studied. It is shown that in identical implantation and post-implantation annealing regimes a SiC buried layer forms more efficiently in CZ Si wafers or in Si (CZ or FZ) subjected to the coimplantation of oxygen. Thus, oxygen promotes SiC layer formation as a result of the formation of SiOx precipitates and accommodation of the volume change in the region where the SiC phase forms. Carbon segregation and the formation of an amorphous carbon film on the SiC grain boundaries are also discovered.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187611
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