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  • 1
    Electronic Resource
    Electronic Resource
    Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3593-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical deactivation of arsenic in silicon has been studied with regard to its effect on enhanced diffusion. Experimental structures consist of a buried boron layer as an interstitial detector, and a fully activated arsenic doped laser annealed surface layer. As these structures are annealed at temperatures between 500 and 750 °C, arsenic in the surface layer deactivates and we observe enhanced diffusion of the buried boron layer. A study with time reveals that the enhanced diffusion transient and the deactivation transient are similar, indicating a strong correlation between both phenomena. The dependence on concentration shows a maximum enhanced diffusion for concentrations between 3 and 4×1020 cm−3 of initially active arsenic. Above these concentrations, the large supersaturation of interstitials nucleates dislocation loops and lowers the overall enhancement measured in the buried boron layer. Temperature data show that even for temperatures as low as 500 °C, enhanced diffusion is observed. These data are convincing evidence that the enhanced diffusion observed is due to the deactivation of arsenic and provides important insights into the mechanisms of deactivation. We propose that arsenic deactivation forms small clusters of various sizes around a vacancy with the injection of an associated interstitial into the bulk. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368593
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical deactivation of arsenic as a source of point defects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 578-580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electrical deactivation of arsenic in silicon has been studied. High concentrations of arsenic were implanted and laser melt annealed, creating boxlike fully electrically active arsenic layers, with no residual implant damage. Wafers were then subjected to low temperature thermal cycles while a buried boron layer monitored point defects. Strong enhancements in the boron diffusion were observed suggesting that arsenic deactivation releases large numbers of interstitials. This is explained by a process where the vacancies required by the deactivated arsenic structures are created through a deactivation assisted Frenkel pair generation process, thus injecting interstitials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112301
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  • 3
    Electronic Resource
    Electronic Resource
    Vacancy generation resulting from electrical deactivation of arsenic (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3575-3577 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical deactivation of arsenic in highly doped silicon has been studied using the positron-beam technique. Direct experimental evidence linking the formation of arsenic-vacancy complexes (i.e., Asn-v) to the deactivation process is reported. The average number of arsenic atoms per complex, n¯(approximately-greater-than)2, was determined by comparing the observed complex concentrations with those of the deactivated arsenic inferred from Hall-effect measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115322
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  • 4
    Electronic Resource
    Electronic Resource
    Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3090-3092 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic impurities in silicon can be electrically activated beyond their electrical solubility to as high as 4×1021/cm3 by ion implantation and laser melting; further annealing decreases this activity to its equilibrium saturation level. To characterize the deactivation process, we used x-ray standing-wave spectroscopy. Hall effect, and secondary-ion-mass spectroscopy. Our results indicate that the As impurities remain in substitutional positions even after 85% of the activation has been lost, so deactivation cannot be due to As migration to interstitial sites or to large precipitates. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116432
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