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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4338-4345 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, single layer, light-emitting devices have been prepared from pristine tris(2,2′ bipyridyl) ruthenium(II) hexafluorophosphate ([Ru(bpy)3](PF6)2) and blends of [Ru(bpy)3](PF6)2 with glassy polymers such as poly(methylmethacrylate) (PMMA), polycarbonate (PC), and polystyrene. Due to the electrochemical nature of the device operation, a high external quantum efficiency at a low operating voltage is achieved. For pristine devices fabricated with an Al cathode, external quantum efficiencies in the range of 1.2%–1.5% at 100–1000 cd/m2 have been achieved. Such devices, however, show signs of degradation in time when stored in the off state in inert atmosphere. Blending with glassy polymers such as PMMA results in an improved film quality and a slowing of the device degradation which, in return, decreases the leakage current during device operation. Therefore, external quantum efficiencies of 2%–2.5% at a light output of 200 cd/m2 are observed when the electroluminescent tris(2,2′ bipyridyl) ruthenium(II) complex is blended with PMMA or PC. In addition, increased efficiency and lifetime are found when the devices are operated under a 50% duty cycle at 5 V and 1 kHz compared to the operation under constant voltage. With a 50% duty cycle, half lives of around 500–1100 h continuous operation have been achieved at luminance levels in the range of 200–350 cd/m2. When Ag is used as the cathode material, PMMA blend devices exhibit external quantum efficiencies in the range of 2.5%–3.0% at luminance levels of around 50 cd/m2. In addition, devices with a Ag cathode show no signs of degradation when stored in the off state. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4067-4071 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film light emitting diodes based on multibilayer combinations of the conjugated polymer poly(phenylene vinylene) (PPV) and different polyanions were fabricated via the use of a simple layer-by-layer molecular-level processing scheme. Molecular-level manipulation of the type and sequence of PPV bilayers used to construct the films was found to produce devices with dramatically improved luminance levels and efficiencies. It was also found that device efficiency could be improved by controlling the nature of the thin film/electrode interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7501-7509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light-emitting diodes have been fabricated from self-assembled multilayers of poly(p-phenylene vinylene) (PPV) and two different polyanions; polystyrene sulfonic acid (SPS) and polymethacrylic acid (PMA). The type of polyanion used to assemble the multilayer thin films was found to dramatically influence the behavior and performance of devices fabricated with indium tin oxide and aluminum electrodes. Light-emitting devices fabricated from PMA/PPV multilayers were found to exhibit luminance levels in the range of 20–60 cd/m2, a thickness dependent turn-on voltage and classical rectifying behavior with rectification ratios greater than 105. In sharp contrast, the devices based on SPS/PPV exhibited near symmetric current–voltage curves, thickness independent turn-on voltages and much lower luminance levels. The significant difference in device behavior observed between these two systems is primarily due to a doping effect induced either chemically or electrochemically by the sulfonic acid groups of SPS. It was also found that the performance of these devices depends on the type of layer that is in contact with the Al top electrode thereby making it possible to manipulate device efficiency at the molecular level. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1316-1318 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroluminescence is obtained from nearly monodisperse CdSe nanocrystallites (quantum dots) incorporated into thin films (1000 A(ring)) of polyvinylcarbazole (PVK) and an oxadiazole derivative (t-Bu-PBD) and sandwiched between ITO and Al electrodes. The electroluminescence and photoluminescence spectra (bandwidths ≤40 nm) are nearly identical at room temperature and are tunable from ∼530 to ∼650 nm by varying the size of the dots. Voltage studies at 77 K indicate that while only the dots electroluminesce at the lower voltages, both the dots and the PVK matrix electroluminesce at higher applied voltages. Variable temperature studies indicate that the electroluminescence efficiency increases substantially as the films are cooled down to cryogenic temperatures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1686-1688 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ruthenium polypyridyl complex has been synthesized and examined as an emitter material in thin film electroluminescent devices. This material exhibits photoluminescent and electroluminescent effects as well as several reversible one-electron oxidation and reduction processes. Electroluminescent devices fabricated from this ruthenium complex either via spin coating methods or self-assembly techniques exhibit relatively high electroluminescent efficiencies and luminance levels in some cases as high as 100 cd/m2. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 1296-1300 
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 8 (1992), S. 3168-3177 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 519-524 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1540-1542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the preparation and characterization of rectifying photovoltaic heterostructure devices made of poly(phenylene vinylene), PPV, and C60. The heterojunctions were built from solution using the technique of layer-by-layer sequential adsorption. This technique permits one to control the heterostructure at the molecular scale. Upon illumination with a laser beam, the devices showed large photoresponses (current and voltage) that resulted from a photoinduced electron transfer between the PPV (donor layer) and the C60 (acceptor layer). The photocurrent was found to increase with the laser power and with the photon energy of the incident radiation. Also, a constant high photovoltage response of ∼700–800 mV was measured. Analysis of the time dependence of the photocurrent rise and decay, when the device was illuminated with a modulated square wave signal (chopped laser beam), permitted us to draw an analogy between the present heterojunction and a circuit made of a capacitor and a resistance in series. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Chemistry of materials 6 (1994), S. 216-219 
    ISSN: 1520-5002
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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