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  • 1
    Electronic Resource
    Electronic Resource
    Thermal properties of CdTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7217-7220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal diffusivity α and conductivity k at room temperature of CdTe semiconductors having different crystalline qualities were determined using a photoacoustic technique. Thermal measurements obtained for each sample were correlated with photoluminescence spectroscopic results in order to associate the observed variation of α and k with crystalline imperfections in CdTe. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358002
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  • 2
    Electronic Resource
    Electronic Resource
    Thermally stimulated currents in CdTe polycrystalline films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3908-3911 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Investigations of trapping centers have been carried out in CdTe polycrystalline films by using the thermally stimulated conductivity (TSC) technique. The measurements were performed in the temperature range from 80 to 300 K. The TSC spectra showed three peaks related to three trapping levels with energy activations of 0.18, 0.29, and 0.32 eV, respectively. The two first trapping levels correspond to known acceptor centers in bulk CdTe previously reported. It is suggested that the level at 0.32 eV is due to grain boundary defects characteristic of the polycrystalline films. The main parameters of these trapping centers have been determined by using known theoretical relations. The temperature dependence of the dark resistivity indicates that the impurity conduction does not make an important contribution to the TSC spectra of the films. From these measurements an activation energy of 0.49 eV for the conductivity of the films was found. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359907
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  • 3
    Electronic Resource
    Electronic Resource
    CdTe nanostructures prepared by thermal annealing (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5461-5463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Homogeneous thin films of a-CdTe:O were thermal annealed in an Ar flux. The as-grown samples have an amorphous structure. The annealed films crystallize to a mixture of both CdTe and CdTeO3. For low annealing temperatures (less than 100 °C) it is possible to get CdTe crystallites with sizes smaller than 14 nm. In this work we report measurements of x-ray diffraction and optical absorption spectra of these films. The x-ray diffraction patterns of the films were used to study the CdTe crystallization process as a function of the annealing temperature. The CdTe crystallite size of the films was determined from the diffraction patterns using the Debye–Scherrer formula. It was observed that the CdTe crystallite size increases with annealing temperature. The optical absorption spectra of the films with the smallest CdTe crystallite size show how the absorption band edge of CdTe is shifted by the effects of the crystallite size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359244
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and optical studies in a-CdTe:O annealed films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7682-7687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of stable crystalline phases of the Cd–Te–O ternary system were prepared by thermal annealing in an Ar flux of amorphous CdTe:O films. The composition of the annealed films depended on the initial oxygen content in the film, the temperature and duration of the annealing process. The annealed films were characterized by means of x-ray diffraction spectroscopy and by optical absorption spectroscopy. The results show that for low oxygen content in the as grown film and high annealing temperature, the CdTe cubic phase is the predominant crystalline phase in the annealed film. For intermediate oxygen content in the as grown film, the result obtained after the annealing process is a composite material consisting in the mixture of both CdTe and CdTeO3 crystallites. The variation of the annealing temperature produces changes in the size of the crystallites of both crystalline phases. It also can change the CdTe to CdTeO3 proportion in the films. For low annealing temperature, the size of the CdTe crystallites in the film is 〈14 nm, the exciton Bohr diameter in CdTe. The optical characterization of the CdTe–CdTeO3 composite material shows that this system is very suitable for the study of optical transitions in the electronic band structure of CdTe. Furthermore, for the films with the smallest CdTe crystallites it is possible to observe the effects in the CdTe band structure produced by the reduction in the size of the CdTe crystallites to a dimension comparable to the exciton Bohr diameter. The annealing process in the as grown films with high oxygen content produces films composed by a mixture of the oxide insulating phases CdTeO3 and CdTe2O5. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362433
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  • 5
    Electronic Resource
    Electronic Resource
    The growth and structure of Cd0.95Fe0.05Te thin films grown by radio-frequency sputtering (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3928-3933 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth and structure properties of Cd1−xFexTe thin films prepared by rf sputtering were studied. Films with thicknesses in the range 0.75–2.45 μm were grown onto Corning glass substrates at temperatures between 50 and 300 °C in an argon atmosphere at a pressure of 3 mTorr. The deposition rate was determined by film thickness profile analysis. Transmission electron microscopy and x-ray diffractometry techniques were used to evaluate the structure, grain size, and orientation of the films. These properties were found to be related to the substrate deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341348
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  • 6
    Electronic Resource
    Electronic Resource
    Large grain size CdTe films grown on glass substrates (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 410-413 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline films of CdTe (with grain size up to 100 μm) were grown by the hot wall close-spaced vapor transport technique in an Ar atmosphere. In most cases they grow on a zinc-blende type of structure with a preferential orientation of growth along the 〈111〉 directions, as shown by x-ray diffraction studies. The grain size in the films presents a maximum around 3.5 Torr, as well as a minimum of preferential orientation. The grain size shows an exponential increase in the substrate temperature (Ts) 450–650 °C range. For Ts≤600 °C, the films grow with a 〈111〉 preferential crystallographic orientation, whereas for Ts〉600 °C the preferential orientation changes to the 〈220〉 directions. For Ts〉600 °C, the films show a mixture of zinc-blende and wurtzite phases, according to the x-ray analysis. A Te crystalline phase is detected for Ts〉550 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340254
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  • 7
    Electronic Resource
    Electronic Resource
    Influence of Cd vacancies on the photoluminescence of CdTe (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 452-454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd vacancies are identified as responsible for both the 1.55-eV narrow band and the 1.591-eV bound exciton peak of the CdTe photoluminescence spectrum. The characteristic 1.44-eV broadband does not seem to be related to luminescent centers involving those vacancies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337620
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  • 8
    Electronic Resource
    Electronic Resource
    Measurement of properties of the n layer in hydrogenated amorphous silicon solar cells (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 820-822 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By measuring flat-band voltage as a function of light intensity it is possible to get information about the transport properties of an intact solar cell. We illustrate different kinds of behavior and show how these are related to solar cell performance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337381
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  • 9
    Electronic Resource
    Electronic Resource
    Thermoreflectance studies in Cd1−xFexTe thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5154-5158 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoreflectance spectroscopy (TR) has been used to analyze Cd1−xFexTe thin films grown by radio-frequency sputtering on glass substrates. Films with different Fe concentration x in the range 0.05≤x≤0.15 were grown under the same conditions of substrate temperature and Ar pressure. To follow the growth of the ternary CdFeTe compound, the evolution of the E0 point in the spectrum was monitored for different films. Compared to a CdTe film grown under the same conditions, the CdFeTe films show a shift in the spectrum of the E0 point to higher energies for x=0.05, 0.10, and 0.15. Besides, both CdTe and CdFeTe films show evidence of the presence of a band of localized states below the band gap, probably related to the growth mechanism. For an x value of 0.10, the TR spectrum shows a line shape related to the presence of an extra transition that we have interpreted as due to additional levels arising from the Fe 3d orbitals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354278
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical conductivity percolation in the (CdTe)1−xTex system (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3254-3256 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical volume fraction for conductivity percolation in the di-phasic system (CdTe)1−x Tex has been determined using atomic force microscopy. The onset for rapid increase in the electrical conductivity is found at a volume fraction of Te of about 0.4. According to previous theoretical calculations this value is characteristic of a system with two-dimensional symmetry. It is also found that the Te phase grows in the form of columns, which explains the observed critical volume fraction value for percolation in the conductivity measurements. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112429
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