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  • 1
    Electronic Resource
    Electronic Resource
    Vacuum near-field scanning optical microscope for variable cryogenic temperatures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3458-3463 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design of a novel near-field scanning optical microscope for cryogenic temperatures and operation in vacuum. A helium flow cryostat is used for active temperature control of the sample in the range between 8 and 330 K, while all components of the near-field microscope are kept at room temperature. This design greatly simplifies near-field microscopy at variable sample temperatures and permits large piezoelectric scan ranges of up to 100×100×10 μm 3, the implementation of hardware-linearized piezoelectric scan stages, as well as flexible coarse positioning. First experiments with single GaAs quantum wires demonstrate the excellent performance of this new instrument. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148308
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2176-2178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a time-resolved near-field luminescence study of excitonic real-space transfer into single GaAs quantum wires. Excitons generated by local optical excitation in a 250 nm spot undergo diffusive transport over a length of several microns and are subsequently trapped into the quantum wire by optical phonon emission. Local energy barriers in the vicinity of the quantum wire, originating from the epitaxial growth mechanism of the nanostructure, directly influence the real-space transfer dynamics and trapping efficiency. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122414
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  • 3
    Electronic Resource
    Electronic Resource
    Near-field Optical Spectroscopy of Single GaAs Quantum Wires (1997)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 25 (1997), S. 583-592 
    Details
    ISSN: 0142-2421
    Keywords: near-field microscopy ; semiconductors ; quantum wires ; photoluminescence spectroscopy ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The nanoscopic room temperature optical properties of single quantum wires are characterized by a combination of near-field photoluminescence and photoluminescence excitation spectroscopy. Single GaAs quantum wires with a 50 nm lateral dimension are grown at the edge of 15 nm high mesa stripes on patterned GaAs(311) surfaces. Wire formation relies on the preferential migration of Ga atoms from a GaAs layer on the mesa top and bottom towards the sidewall. Spatially resolved photoluminescence spectra separate quantum wire and quantum well emission and image the diffusion of photoexcited carriers into the wires. Photoluminescence excitation spectra give insight into the absorption spectrum of the wires and the spectral position of different interband transitions in the one-dimensional carrier system. They allow the change in local thickness of the GaAs quantum well due to the migration process to be monitored directly with subwavelength spatial resolution. Both the trapping of carriers into the wire and the detrapping of carriers generated within the wire into the surrounding quantum well states are separately resolved.© 1997 John Wiley & Sons, Ltd.
    Type of Medium: Electronic Resource
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