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  • 1
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on planar-doped pseudomorphic InGaAs high electron mobility transistor structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2273-2275 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effects of rapid thermal annealing on the electrical and optical properties of planar-doped AlGaAs/InGaAs/GaAs high electron mobility transistor structures grown by molecular beam epitaxy. Hall effect and photoluminescence measurements on samples with In0.22Ga0.78As and In0.28Ga0.72As channels reveal a temperature-dependent degradation in sheet charge density, Hall mobility, and photoluminescence response. The structures were essentially stable through the temperature range used in normal device processing. However, annealing temperatures greater than 700 °C resulted in strain relaxation and layer intermixing, especially for the In0.28Ga0.72As sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104897
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal currents in proton isolated gallium arsenide structures at elevated temperatures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 79-81 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a new and simple technique, thermal currents between proton isolated devices fabricated on semi-insulating gallium arsenide (GaAs) substrates have been observed for the first time at temperatures from 25 °C up to 300 °C. The thermal currents show definite Ohmic behavior with respect to the applied voltage at a fixed temperature. An Arrenhius plot of the thermal current at a fixed bias voltage level for a given test structure yields a straight line with an activation energy that can be ascribed to known deep levels in GaAs. The implications that this thermal leakage current have on the functionality of GaAs metal-semiconductor field-effect transistors at high temperatures are also addressed in this work.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110874
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Millimeter wave monolithic high electron mobility (HEM) varactor diode-grid frequency tripler arrays (1991)
    Springer
    International journal of infrared and millimeter waves 12 (1991), S. 1409-1423 
    Details
    ISSN: 1572-9559
    Keywords: high electron mobility varactor diode ; frequency tripler ; diode-grid array
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract High Electron Mobility (HEM) varactor structures have been studied for millimeter-wave monolithic diode-grid frequency tripler array applications. The improved HEM varactor diode structures provide a highly nonlinear C-V characteristic (i.e., a steep slope of the C-V curve and a large capacitance ratio) which produces high harmonic generation efficiency and reduce the power requirement for efficiently pumping each device. The effects of the light illumination on the C-V characteristics of the Barrier-Intrinsic-N+ (BIN) varactor diode have also been studied and the results will be discussed in this paper. In the development of a monolithic diode-grid frequency multiplier array, the low-loss quasioptical configuration is used for the construction of the multiplier circuit. The study of the effects of the light illumination on the C-V characteristics of varactor diode is important in understanding the potential applications of the quasi-optical varactor diode-grid frequency multiplier array circuit.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01883874
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Design criteria of the near-millimeter wave quasi-optical monolithic diode-grid frequency multiplier array (1992)
    Springer
    International journal of infrared and millimeter waves 13 (1992), S. 1145-1161 
    Details
    ISSN: 1572-9559
    Keywords: near-millimeter ; diode-grid ; tripler ; array
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The high-frequency performance along with the optimum designs and operating conditions of near-millimeter wave quasi-optical monolithic diode-grid frequency multiplier arrays have been studied and will be presented in this paper. The limitations of the development of nearmillimeter wave quasi-optical monolithic diode-grid frequency multiplier arrays will be discussed in detail. The optimum operating conditions and performance of different device structures are presented along with the associated device physics. The optimum designs, operating conditions and performance of the monolithic diode-grid frequency multiplier array will also be discussed based upon the temperature distribution study on the diode-grid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01009057
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    Paper (German National Licenses)
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