Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 1617-1619
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We utilized the conventional planar fabrication technique and the electrochemical etching method to prepare porous Si layers in the p-type region of a p-n junction, which makes the study on the transverse transport property of this material possible. The junctions were fabricated by low energy ion implantation, with porous Si formed perpendicular to the junction and between two metal contacts. This structure confines currents to the direction parallel to the surface. Distinct photoconductivity and photovoltaic effects have been clearly revealed from the I-V curves.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108604
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