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  • 1
    Electronic Resource
    Electronic Resource
    Real-time monitoring of the reaction of H2S on GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6146-6149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reaction of H2S on (100)-oriented GaAs surfaces has been studied in real time by an optical technique. Reflectance difference was used to follow the surface anisotropy. Kinetic studies were made of the reaction of H2S on an As-terminated as well as on a Ga-terminated surface. We show that the sulfur incorporation process is different for these surfaces. The time constant for the reaction of H2S on an As-terminated surface was measured for different conditions. Based on the temperature dependence of the reaction rate, and its nonlinear dependence on the flow of H2S, the process of incorporation is discussed. We show also that the probability for formation of [110]-oriented Ga dimers during a TEG supply is significantly decreased if the surface was exposed to H2S for a prolonged period.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355180
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  • 2
    Electronic Resource
    Electronic Resource
    Planarization of epitaxial GaAs overgrowth over tungsten wires (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 500-503 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on thin GaAs epitaxial overgrowth over tungsten wires. The aim of the study is to overgrow the grating without the formation of voids above the tungsten wires and to investigate the planarization of the growth front over the grating. It is established that the most important factors for rapid planarization of the overgrowth for given epitaxial conditions are the crystallographic orientation of the grating, the grating period, and the ratio of the growth rates for the different facets formed in the growth front. For a 300 nm period grating and a metal width of 100 nm, a planarized growth front is demonstrated after 200 nm of growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360857
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  • 3
    Electronic Resource
    Electronic Resource
    Stacking InAs islands and GaAs layers: Strongly modulated one-dimensional electronic systems (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3360-3364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: With chemical beam epitaxy we stacked small InAs islands, separated by thin GaAs layers. Reflection electron diffraction during growth showed that after a seed-layer growth, subsequent depositions require less InAs to form the islands. At 5 K the stacks have narrower luminescence peaks at lower energies than single island layers, and the stacks luminesce at room temperature. For 4-nm-high pyramidal islands with 20-nm-wide bases, we observed vertical periods down to 5.4 nm, small enough to couple quantum mechanically. The electronic structures possible for this class of objects should be sufficient for designing and observing room temperature quantum mechanical phenomena. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363248
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  • 4
    Electronic Resource
    Electronic Resource
    Self-limiting transformation of monodisperse Ga droplets into GaAs nanocrystals (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1409-1411 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs nanocrystals, of approximate diameter 10 nm, have been produced and deposited on various substrates. The fabrication route allows the production of nanocrystals with a very narrow size distribution. It utilizes the formation of ultrafine Ga particles and their self-limiting reaction with arsine at elevated temperatures. The kinetics of the reaction of Ga to produce GaAs depends on the temperature and the arsine flow. The temperature at which the reaction began was found to be as low as 200 °C. Our approach opens the possibility to produce size-selected nanocrystals of compound semiconductors in a simple, reliable, and efficient way. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116096
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  • 5
    Electronic Resource
    Electronic Resource
    Indium enrichment in Ga1−xInxP self-assembled quantum dots (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6378-6381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum dots of Ga1−xInxP on GaP (001) have been grown by low-pressure metalorganic vapor phase epitaxy at 650 °C with varying (Ga,In)P coverages. The quantum dots were extensively characterized by transmission electron microscopy (TEM), atomic force microscopy, energy dispersive x-ray spectroscopy, and temperature-dependent photoluminescence spectroscopy (PL). With increasing coverage the dots develop first as flat, extended hills with more or less pronounced {113} facets. Subsequently, on top of these hills, smaller, well-faceted, In-rich dots are formed. The PL intensity emitted from these dots is first constant and then increases with increasing temperature towards a maximum at about 200 K before it decreases. We present a model which explains the experiments, assuming In-rich dots surrounded by Ga-rich barriers. No evidence of alloy ordering was found in the TEM measurements. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1325386
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  • 6
    Electronic Resource
    Electronic Resource
    Stability towards photoelectrochemical etching in Ga(As, P) alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 530-532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stability towards photoelectrochemical (PEC) etching in hexacyanoferrate (II) (=R) solution has been determined for a set of single-crystalline ternary alloys in the series GaAs1−yPy (0〈y〈0.8), using the rotating ring-disk electrode technique. It was found that the stability coefficient S increases monotonicaly but nonlinearly from a low value in the GaAs end to near 1 for y=0.8. The data are consistent with a kinetic model involving competition between decomposition and hole transfer from the valence band edge to R with a probability determined by the thermal fluctuating energy level model. The findings are of potential interest in using selective PEC etching in preparing structures in optoelectronics and multilayer heterostructures for high-speed electronics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340082
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  • 7
    Electronic Resource
    Electronic Resource
    EFFECTS OF NEW CONTROL SYSTEMS IN SWEDISH HEALTH CARE ORGANIZATIONS (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Financial accountability and management 12 (1996), S. 0 
    Details
    ISSN: 1468-0408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Organizations that are radically changing their control systems provide interesting arenas for studies of the effects of such systems. Research on public organizations have shown reforms in some cases to have effects but in other cases they have had no effects. The aim of our study is to describe the introduction and effects of a new control system in the Swedish health care sector. Basically a traditional budget system is replaced with a system according to which hospitals are paid for services made. We found that the new system had functional but also some dysfunctional effects. The major functional effect was an increased productivity. This was possible due to an earlier low level of productivity. However, increased productivity demands capacity reductions given a certain production level. Such decisions must be taken by politicians but they are, however, very reluctant to reduce capacity, which may cause serious disturbances in the system and dysfunctional consequences.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1468-0408.1996.tb00420.x
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  • 8
    Electronic Resource
    Electronic Resource
    Sintered aerosol masks for dry-etched quantum dots (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3293-3295 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a sintering step in producing ultra-fine silver aerosol particles to serve as etch masks for semiconductor quantum-dot structures. Our experiments found heating conditions that reshape the Ag particles, resulting in a spherical shape and very good size uniformities. Using this improved aerosol generation technology, we have dry etched InP columns with 24±5 nm diameter and with very good uniformity, with nearly every aerosol particle resulting in a column. Column arrays with a density as high as 3×109 cm−2 could be produced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111314
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  • 9
    Electronic Resource
    Electronic Resource
    Nanometer patterning of InP using aerosol and plasma etching techniques (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 837-839 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By the application of aerosol techniques for the deposition of well-defined particles of silver in combination with methane-based electron cyclotron resonance plasma etching, we have been able to fabricate nanometer sized columns of InP. Silver particles are produced via homogeneous nucleation out of silver vapor saturated nitrogen gas from a tube furnace at around 1100 °C and, after size selection, deposited on the surface of InP. Scanning electron microscope images show that equally sized particles of silver, with an effective diameter in the range 20–40 nm, can be generated and deposited on the semiconductor. In a dry etching process applied subsequently we transfer vertically the feature of the particles into the InP material underneath producing free-standing columns of InP with diameters as small as 50 nm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107761
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  • 10
    Electronic Resource
    Electronic Resource
    Lateral confinement in a resonant tunneling transistor with a buried metallic gate (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 311-313 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated a resonant tunneling transistor by epitaxial overgrowth over a tungsten grating placed 30 nm above a GaAs/GaInP semiconductor, double barrier, resonant tunneling heterostructure. The Schottky depletion around the buried metal contacts controls the current to a vertical transistor channel. The lateral extension of this channel is defined by a square opening in the grating with a side length of 1.4 μm, which corresponds to a sub-μm electrical width. The transport properties at 20 K show a fine structure in the resonant tunneling characteristics, and it is affected by the gate bias. These effects are discussed in terms of lateral quantum confinement in the transistor channel defined. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123008
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