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Control of stability and current-voltage characteristics in amorphous hydrogenated silicon nitride thin film diodes (1997)

McGarvey, B. ; Curran, J. E. ; Ford, R. A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 82 (1997), S. 1711-1715

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Current transport and instability mechanisms in thin film diodes with nonstoichiometric silicon nitride (a-SiNx:H) semiconducting layers have been investigated. In common with amorphous silicon thin film transistors the electrical characteristics of these diodes have been found to drift during use. We found that the initial current-voltage characteristics are related to the choice of interfacial treatments. This is explained by trapping of electrons at interface defect states and by tunneling of electrons into the conduction band via these states. We have also found a relationship between the initial characteristics of the diodes and the rate of drift due to electrical stressing. A threshold exists below whose drift is independent of the current-voltage characteristics and above which there is a strong dependence. This dependence of drift on current-voltage characteristic is consistent with field enhanced defect creation in the a-SiNx:H layer. © 1997 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.365971

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Digitale Medien

Current induced drift mechanism in amorphous SiNx:H thin film diodes (1994)

Shannon, J. M. ; Deane, S. C. ; McGarvey, B. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 65 (1994), S. 2978-2980

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: It is shown that the drift in the current–voltage characteristics of silicon-rich amorphous silicon nitride metal–semiconductor–metal diodes can be explained by a mechanism whereby electron trapping centers are created via hole–electron recombination. A first order model which includes excitation of holes by hot electrons moving into the anode and recombination of electrons with holes trapped in the valence band tail is in good quantitative agreement with the measured dependencies between drift, device thickness, current density, time, and charge passed through the device. © 1994 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.112482

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