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  • 1
    Electronic Resource
    Electronic Resource
    Low threshold field emission from nanoclustered carbon grown by cathodic arc (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3126-3131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocluster carbon films grown using a cathodic arc process at room temperature in the presence of background gases such as He are found to be good electron emitters. The variation in the surface morphology and the corresponding emission characteristics of the films with change in helium partial pressure (5×10−4–50 Torr) during the film growth are reported. The effect of helium partial pressure on clustering was studied for films grown at nitrogen partial pressures of 10−4 and 10−3 Torr. The surface morphology of the films grown, varied from smooth through clusters (with sizes 50–200 nm), to fibrous films. The threshold field varied from 1 to 10 V/μm for an emission current density of 1 μA/cm2. These films exhibit an emission site density of ∼104–105/cm2 at an applied field of 5 V/μm. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372309
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Field emission from tetrahedral amorphous carbon as a function of surface treatment and substrate material (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1594-1596 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To understand the mechanism of electron field emission from diamond-like carbon, tetrahedral amorphous carbon (ta-C) films were subjected to Ar, H2, and O2 plasma treatments to change their surface condition and were deposited on substrates of different work function. The threshold fields and current densities for undoped ta-C are found to be significantly improved by the plasma treatments, largely due to an increase in emission site density, while little dependence was found on work function of substrate. This suggests that the main barrier to emission from ta-C is at the front surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123627
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  • 3
    Electronic Resource
    Electronic Resource
    Field emission from tetrahedral amorphous carbon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1430-1432 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emission has been measured from a series of tetrahedrally bonded amorphous carbon (ta-C) films produced by the filtered cathodic vacuum arc. The threshold field and current densities achievable have been studied as a function of their sp3 content and of nitrogen incorporation. Typical undoped ta-C films are found to have a threshold field of 10–20 V/μm, decreasing with increasing sp3 content, and optimally nitrogen doped films exhibit threshold fields as low as 3–5 V/μm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119915
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    Paper (German National Licenses)
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