ISSN:
1572-817X
Keywords:
all-solid-source MBE
;
high-power
;
red
;
simulation
;
transverse structure
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The laser diode structures reported up to now in literature for the red wavelength range are still far from optimal – mostly because many of the desired characteristics are contradictory coupled. Some of the contradictory coupled laser diode characteristics are investigated and a novel transverse layer structure is proposed. Both optical simulation and a fully self-consistent model are used in a design optimization methodology and simple evaluation and optimization criteria are derived. A number of the analyzed high-power edge-emitting GazIn1−zP/(AlxGa1−x)yIn1−yP/GaAs quantum well laser structures were prepared using all-solid-source molecular beam epitaxy for layer growth and remarkable performances were obtained (continuous wave output powers of 3 W at 670 nm, 2 W at 650 nm, and 1 W at 630 nm; threshold current densities of 350–450 A/cm2 for 670 nm, 500–540 A/cm2 for 650 nm, and less than 700 A/cm2 for 630 nm). The good agreement between measurements and simulations for the prepared structures indicate that significant performance improvements – predicted by the simulations – are still possible. The presented novel structure and design optimisation procedure can also be applied to laser diode structure optimisation in other emission ranges – like, for example, in the case of 800 nm-range edge emitting AlxGa1−xAsyP1−y/GazIn1−zAswP1−w/GaAs laser diodes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1007076928803
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