ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The homoepitaxial deposition of diamond layers on {111} and {001} type-IIa natural diamond substrates, by both laminar and turbulent acetylene-oxygen flames, is described. Using the same gas flows, temperatures, and supersaturations of 4%, a higher growth rate was obtained on a {001} substrate with a turbulent flame than with a laminar flame. Layers grown at the same temperature on {111} substrates with a supersaturation of 3% show no significant difference in growth rate. Due to the large differences in geometry between both types of flames it is not possible to relate the substrate positions in the acetylene feathers to each other and compare the growth results at any location. However, it is shown that the application of turbulent flames for single-crystal growth does not lead to a dramatic change in quality of the diamond as was previously reported in the literature. It is demonstrated by microscopic and spectroscopic techniques that the crystallographic orientation of the substrates, the deposition temperature, and the gas velocity all have a larger influence on the crystal morphology and impurity incorporation of the grown single crystals than the introduction of turbulence. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360159
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