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  • 1
    Electronic Resource
    Electronic Resource
    Substrate effect on the transport properties of semiconducting films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1621-1626 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this study, transport properties of InP/Si heteroepitaxial layers were investigated. Current-voltage characteristics, measured across the heterointerface, revealed diode behavior at 300 K only with Si of p-type conductivity. With n-type Si, a transition from Ohmic behavior at 300 K to a diode characteristic at low temperatures was observed at 250 K. Due to the efficient electrical isolation of layer and p-type substrate van der Pauw measurements with InP/p-Si could be analyzed in the conventional manner. For InP/n-type Si the applicability of the two-layer conduction model suggested by Petritz could be demonstrated for 300 K measurements. With decreasing temperature a pronounced deviation from the model occurred due to the increased effect of the heterointerface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358917
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  • 2
    Electronic Resource
    Electronic Resource
    In-plane effective mass of electrons in InGaAs/InP quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2828-2830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured the in-plane effective mass for electrons in multiquantum wells in InGaAs/InP by the Shubnikov–de Haas effect. We varied the well width from 8.6 down to 2.3 nm where the enhancement of the effective mass is predicted to be very pronounced. The electron concentration was in the range of 3×1011 cm−2, so that band filling can be neglected. The variation of the effective mass from 0.045 to 0.067m0 is in accordance with current theories. We discuss the effect of the interface roughness and ionized impurities on the scattering times as found from our experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358694
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  • 3
    Electronic Resource
    Electronic Resource
    Scattering mechanisms and defects in InP epitaxially grown on (001) Si substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4705-4712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentration and mobility of unintentionally doped InP layers, grown directly on Si using metal-organic vapor-phase epitaxy, have been studied. The formation of antiphase domains (APDs) was found to depend on annealing of the Si substrate in an AsH3 flow prior to epitaxial growth. Dislocation densities determined by the wet chemical delineation technique were (8±1)×107 cm−3, seemingly uncorrelated to APDs in the layers. In addition to a shallow donor and a compensating acceptor, a deep donor was observed affecting the temperature dependence of the free-electron concentration between 77 and 300 K. The electron mobility in this temperature range could be described in terms of the scattering mechanisms which are dominant in homoepitaxial InP, namely, scattering due to polar optical phonons, to ionized impurities, and to space charges. Electron scattering due to either of these mechanisms was strongly influenced by the occurrence of antiphase boundaries (APBs). The space-charge density as well as the degree of compensation of the epitaxial layers increases with the density of APBs. Degraded 300 K mobilities were obtained indicating the effect of local stress at the APB.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358445
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  • 4
    Electronic Resource
    Electronic Resource
    The distribution of charge concentration in InP/Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 224-228 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of the charge concentration of InP layers grown on Si substrates by metalorganic vapor-phase epitaxy was investigated. The concentration near the surface and within the bulk of the layer was found to be governed by Si doping out of the ambient gas. Diffusion of Si across the heterointerface which may be partially assisted by dislocations is dominant in a region near the InP/Si interface. In the vicinity of the heterointerface the charge concentration in the InP layer is determined by strong compensation, which is attributed to defects caused by the mismatch of lattice parameter and thermal-expansion coefficient of InP and Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360655
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  • 5
    Electronic Resource
    Electronic Resource
    The effect of dislocations on the optical absorption of heteroepitaxial InP and GaAs on Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9273-9277 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical absorption of heteroepitaxial InP and GaAs layers grown on exactly [001]-oriented Si substrates was investigated by spectroscopic ellipsometry combined with anodic stripping. In the wavelength range above the band-gap-equivalent wavelength considerable absorption was found which depends on the dislocation density in the layer. A theoretical model based on the electric microfield of charged dislocations was developed which agrees closely with the experimental results. After calibration differential spectroscopic ellipsometry was used to determine the dislocation-density profile in the InP and GaAs layers. Thus, the dislocation density could be determined in the region of a few tens of nm to the heterointerface of InP on Si where the identification and counting of dislocations is impossible by other methods. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362577
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of dislocations on the transport properties of III/V-compound semiconductors on Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6141-6146 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transport properties of InP and GaAs epitaxial layers grown on exactly (001)-oriented Si substrates were investigated by temperature-dependent van der Pauw measurements combined with anodic stripping. Electron concentrations n at T=300 K decreasing from around 1018 cm−3 at the heterointerface to a constant level of 1016 cm−3 toward the surface agree well with the concentration profile of Si donors. Their activation energy is 2.9 and 1.3 meV in InP/Si and GaAs/Si, respectively. At low temperatures a marked decrease of the electron mobility μ at the heterointerface occurred. A quantitative analysis of μ (T) led to the model of charged dislocations as scattering centers. By comparison with the dislocation densities of 2×108 and 1×108 cm−2 in the vicinity of the surface of 2- and 3-μm-thick layers found by wet chemical etching we derived the occupation probability of the charged centers along the dislocation lines as 0.2 and 1.0 for InP and GaAs, respectively. At 300 K μ was almost unaffected by dislocation scattering and values of 3600 cm2/(V s) (InP) and 3800 cm2/(V s) (GaAs) for n of 2×1016 and 8×1016 cm−3 were obtained which are close to the values found with homoepitaxial layers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360557
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  • 7
    Electronic Resource
    Electronic Resource
    Simulation of the orientation-dependent growth of InGaAs/InP by metalorganic vapor-phase epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4906-4908 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of InGaAs/InP heterostructures on patterned (100) InP substrates by metalorganic vapor-phase epitaxy (MOVPE) was investigated. Anisotropic growth rates as obtained by measurements were exploited to precisely predict defined growth shapes. We present a model with a complete set of parameters to simulate the growth of In0.53Ga0.47As and InP by MOVPE. The model relies on a graphical construction procedure to determine the cross-sectional structure of heterostructures on patterned substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357272
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  • 8
    Electronic Resource
    Electronic Resource
    InGaAs quantum wires and wells on V-grooved InP substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5207-5214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of In1−xGaxAs quantum structures on V-grooved InP substrates grown by metalorganic vapor phase epitaxy. The geometry of the quantum wells and wires was determined by scanning-electron microscopy and atomic-force microscopy. We optimized the InP buffer-layer thickness in order to obtain narrow quantum wires. The optical properties were studied by photoluminescence (PL) spectroscopy. The PL peaks of the different quantum structures can be identified by a self-aligned masking process. The interpretation of the PL measurements was verified by means of cathodoluminescence measurements with high spatial resolution. Transition energies were evaluated from the geometry of the quantum wells and quantum wires. The composition of the InGaAs was used as a parameter for the calculations. By comparison of the measured transition energies with the evaluated ones we determined the Ga content of the quantum structures. We found the quantum wires nearly lattice matched to the InP substrate and the quantum wells on {111} planes rich in In (1−x=71%). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371502
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  • 9
    Electronic Resource
    Electronic Resource
    A procedure for temperature-dependent, differential van der Pauw measurements (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4271-4276 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A two-step procedure is presented for temperature-dependent carrier-concentration and mobility profiling of InP and GaAs epitaxially grown on Si. Carrier concentrations and mobilities are determined by the van der Pauw technique between 14 and 300 K using a refrigerator-cooled cryostat. Anodic oxidation and oxide stripping by chemical etching were selected for the subsequent removal of controlled thin sublayers. By the combination of differential and temperature-dependent van der Pauw measurements, mobilities and carrier concentrations in dependence on depth and temperature have been extracted whereby the carrier-concentration profile at room temperature agrees very well with the results obtained by the electrochemical C/V technique. For InP/Si at a distance of more than 0.7 μm away from the heterointerface, the dependence of the carrier mobility on the concentration at room temperature is essentially the same as for InP/InP layers. At low temperatures, e.g., 77 K, scattering by dislocations results in a mobility reduction in InP/Si and GaAs/Si with respect to homoepitaxy. Due to the nonuniform distribution of impurities and dislocations the temperature dependences of carrier concentration and mobility vary considerably with depth, thus strongly recommending the use of the differential technique. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145381
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  • 10
    Electronic Resource
    Electronic Resource
    A new maskless selective-growth process for InP on (100) Si (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4366-4368 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have developed a new selective-growth process of InP on exactly (100)-oriented Si substrate in a conventional low-pressure metal-organic vapor-phase-epitaxy system. In this process, the InP epitaxial layer was deposited on a photolithographically patterned InP-buffer film without an additional dielectric mask during the growth. Under our experimental conditions, the InP growth has a very high selectivity and the InP epitaxial layer is antiphase-domain free. Experimental results show that the undesirable sidewall-growth interaction in conventional dielectric mask selective-growth processes is effectively suppressed. Spatially resolved photoluminescence displayed very high optical quality of patterned InP layers compared to those grown on blanket substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352201
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