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  • 1
    Electronic Resource
    Electronic Resource
    Interdiffusion in NiMnSb/V/NiMnSb: X-ray and neutron reflectivity investigation of ion beam sputtered trilayer systems (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5146-5151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The new trilayer system NiMnSb/V/NiMnSb on MgO(001) was investigated by means of vibrating sample magnetometry (VSM), x-ray, and neutron reflectivity. VSM revealed a coercive field Hc=23 Oe and a hysteresis loop similar to that of an uncoupled ferromagnet. The x-ray and neutron reflectivity data proved that interface roughnesses of 10 Å are present. A detailed analysis yielded significant interdiffusion at the NiMnSb/V interfaces which is one possible explanation for the weak magnetoresistance effect measured in similar NiMnSb-based multilayer systems. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371491
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray characterization of buried allotaxially grown CoSi2 layers in Si(100) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5823-5830 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An x-ray study of the interface morphology and lattice parameters of buried expitaxial CoSi2 layers in Si(100) is presented. Specular reflectivity, diffuse and crystal truncation rod scattering, together with grazing incidence diffraction yield detailed information about the interface quality and lattice mismatch. It turns out that the CoSi2 interfaces are considerably smoothened by an annealing step at 1150 °C. Also the in-plane correlation length of the roughness increases yielding laterally smoother interfaces. While the perpendicular lattice parameter is between that of a free relaxed and a pseudomorphic structure and a linear contraction as function of the annealing temperature is obtained, grazing incidence diffraction reveals the opposite effect for the in-plane lattice mismatch. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367439
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  • 3
    Electronic Resource
    Electronic Resource
    In situ growth study of NiMnSb films on MgO(001) and Si(001) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2005-2007 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sputter deposition of thin magnetic NiMnSb films on MgO(001) and Si(001) is investigated by in situ x-ray scattering. It is shown that the roughness of the layers as a function of the film thickness increases according to power laws with unusually large growth exponents. The optimum growth conditions are found on the substrate MgO(001) at temperatures of 250 °C during the deposition. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126236
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  • 4
    Electronic Resource
    Electronic Resource
    Non-Gaussian Roughness of Interfaces: Cumulant Expansion in X-ray and Neutron Reflectivity (1997)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 30 (1997), S. 963-967 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Within the Born approximation, a cumulant expansion is used for the formulation of X-ray or neutron reflectivity. Odd- (third-) order cumulants indicate asymmetric profiles; they may only be detected in layer systems via a Qz dependence of the oscillation period of Kiessig fringes. Fourth-order cumulants are also visible in the larger Qz regime for single interface systems. As an example of an asymmetric surface, a triangular height distribution function is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S002188989700441X
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