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Density of glow discharge amorphous silicon films determined by spectroscopic ellipsometry (1994)

Haage, T. ; Schmidt, U. I. ; Fath, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 4894-4896

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The dielectric function of thin-film hydrogenated amorphous silicon (a-Si:H) grown on fused silica at different substrate temperatures has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data is based on a tetrahedron model that takes into account the influence of hydrogen incorporation in the amorphous network. It is shown that the film density can be derived from an accurate data interpretation, whereas the maximum value of the imaginary part of the dielectric function ε2max and the void volume fraction are not proportional to the density of a-Si:H films.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.357267

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Modelling the dielectric function of thin films measured by spectroscopic ellipsometry: determination of microstructure and density (1995)

Haage, T. ; Schmidt, U. I. ; Schröder, B. ; [et al.]

Springer

Fresenius' Zeitschrift für analytische Chemie 353 (1995), S. 556-558

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ISSN: 1618-2650

Source: Springer Online Journal Archives 1860-2000

Topics: Chemistry and Pharmacology

Notes: Abstract The dielectric function of thin-film amorphous hydrogenated silicon (a-Si:H) deposited by the glow discharge and hot wire technique has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data taking into account the influence of hydrogen incorporation into the amorphous network enables to determine the film density and the void volume fraction of the material. Thus ellipsometry provides a convenient and contactless means of characterizing the structural properties of thin films. The film density varies considerably with substrate temperature and hydrogen content depending on the individual deposition technique. A reduction of film density is mainly caused by the formation of voids in the amorphous network. The influence of the substrate temperature on the growth of dense a-Si: H films is pointed out.