ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Silicon-On-Insulator (SOI) technology exhibits significant performance advantages overconventional bulk silicon technology in both electronics and optoelectronics. In this chapter wepresent an overview of recent applications on light emission from SOI materials. Particularly, in ourwork we used SOI technology to fabricate light emitting diodes (LEDs), which emit around1130 nm wavelength with an external quantum efficiency of 1.4 × 10−4 at room temperature(corresponding to an internal quantum efficiency close to 1 %). This is almost two orders ofmagnitude higher than reported earlier for SOI LEDs. This large improvement is due to three carrierconfinement mechanisms: geometrical effects, quantum-size effects, and electric field effects. Ourlateral p+/p/n+ structure is powered through two very thin silicon slabs adjacent to the p+/p and n+/pjunction. Such use of thin silicon films aims to reduce the p+ and n+ contact area and to confine theinjected carriers in the central lowly doped p-region. With this approach, we realized an efficientcompact infrared light source with high potential switching speed for on-chip integrationapplications
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.590.101.pdf
Permalink
