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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4872-4878 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the interface properties of the molecular organic semiconductor copper phthalocyanine (CuPC) on single crystalline as well as polycrystalline Au using photoemission spectroscopy. Despite the different orientation of the molecules on the two substrates, the observed energy level alignment is identical. We observe the formation of an interface dipole while band bending is very small. In addition, we have carried out complementary studies of the CuPC/GeS(001) interface to pin down photoemission final state effect contributions to the observed energy level shifts. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 466-469 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20–50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1535-1540 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation of interface properties of the hole transport material N,N′-diphenyl-N,N′-bis (3-methylphenyl)–(1,1′)–biphenyl-4,4′diamine (TPD) on indium–tin oxide (ITO) and on GeS(001) using x-ray and ultraviolet photoelectron spectroscopy. On both the TPD/ITO interface and the TPD/GeS(001) heterojunction we found shifts of the vacuum level indicating a formation of an interfacial dipole barrier. We obtained a barrier for the hole injection for TPD on Ar ion sputter-cleaned ITO of 1.5 eV which is significantly higher than the commonly cited value of 0.5 eV for ozone-oxidized ITO, whereas the interface dipole barrier of 0.3 eV is in good agreement with reported data. At low coverages of TPD on ITO additional features in the C 1s core level spectra were found, which can be ascribed to a partially oxidized TPD species at the interface. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2916-2918 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the interface properties between indium tin oxide (ITO) and the well-established molecular organic semiconductor copper phthalocyanine (CuPC) and its fluorinated relative copper tetraflourophthalocyanine (CuPCF4) using photoemission spectroscopy. It is shown that a strong chemical interaction occurs between the PC molecules and ITO which indicates the presence of interface states at these technically relevant interfaces. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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