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  • 1
    Electronic Resource
    Electronic Resource
    Carbon dioxide reduction on gallium arsenide electrodes (1985)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 3295-3298 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100261a026
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  • 2
    Electronic Resource
    Electronic Resource
    Oxidation processes on cadmium selenide and selenium electrodes (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 976-980 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150649a026
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  • 3
    Electronic Resource
    Electronic Resource
    Current-doubling reactions on titanium dioxide photoanodes (1986)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 6663-6667 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100283a014
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  • 4
    Electronic Resource
    Electronic Resource
    Impurity band conductance through oxygen vacancy donor states in bismuth iron molybdate (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7703-7707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under chemical reduction at 620 K in an atmosphere of methanol vapor in a nitrogen carrier gas, bismuth iron molybdate [Bi3FeO4(MoO4)2] will give up lattice oxygen and form highly mobile vacancies. These vacancies act as donors and sit about 0.4 eV below the conduction band edge: The band gap is 2.7 eV. Because of the ability to remove up to 1% of the lattice oxygen and still maintain crystallographic stability, it is relatively easy to produce high donor carrier densities (up to 1020 cm−3). Under these conditions, and taking into account that this is a wide gap semiconductor with well compensated deep donor levels, it is possible to measure an electrical conductivity dominated by carrier movement through the impurity band. Both phonon assisted hopping and the transition to metallic impurity conduction have been observed. The crossover temperature from conduction dominated by the impurity band to conduction dominated by the conduction band was seen to increase from 125 to 380 K with increasing oxygen depletion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362435
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  • 5
    Electronic Resource
    Electronic Resource
    Rapid migration of silver on roughened glass surfaces in a methanol/air mixture near 500 °C (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2407-2414 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results presented here show that at elevated temperatures (about 500 °C) silver can be mobile on tin oxide, as well as other metal oxide surfaces. Because the migrating species seems to be Ag+ both diffusion and electrically assisted migration occurs. This movement is made visible in the form of tiny silver droplets on the glass surface by the presence of methanol vapor mixed in air. Without oxygen no migration occurs at all. It is clear that the movement requires a continuous or dynamic conversion of silver ions to silver oxide and back again, through the presence of both oxidizing and reducing agents. We show how it is possible to measure the diffusion constant and the electrical mobility constant by an appropriate analysis of the time evolution of a circular front of silver droplets measured with a video camera connected to a microscope zoom lens. Typical values on a roughened glass surface at 500 °C are for mobility, 42±13×10−6 cm2/V s, and for diffusion 12±6×10−6 cm2/s. Similar values for the electrical mobility on a smooth tin oxide surface have been measured. At this temperature diffusion on pure silica or even Pyrex glass powder is very slow, but the diffusion constant for MgO or CaO powder, annealed onto a sandblasted glass surface, is about 10−4 cm2/s. These oxides may be responsible for the movement seen on soda glass surfaces. The activation energy is about 4 eV and seems related to the work function of silver metal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358766
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  • 6
    Electronic Resource
    Electronic Resource
    Production of positive ions during the catalytic oxidation of organic vapors on hot platinum (1988)
    s.l. : American Chemical Society
    Analytical chemistry 60 (1988), S. 460-465 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00156a018
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  • 7
    Electronic Resource
    Electronic Resource
    Mobility of silver on tin oxide surfaces (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2185-2186 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of the rapid drift mobility of metallic silver under an applied electric field on the surface of a pyrolitically deposited tin oxide film. Silver dag contacts were applied to the surface of the film which was maintained in air at a temperature of 330 °C under a potential difference of a few volts. Under these conditions metallic silver was seen to migrate across the film forming both fractal and dense packed structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102074
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  • 8
    Electronic Resource
    Electronic Resource
    Electrochemical photoconductive technique for measuring the distribution of traps in semi-insulating GaAs (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3148-3154 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper an electrochemical photoconductive technique is introduced as a means of examining the distribution of traps in semi-insulating gallium arsenide (107 Ω cm). This technique involves the use of an electrochemical solution in place of one of the metallic (ohmic) contacts which are used in solid-state photoconduction. Separation of electron and hole traps is possible using an electrochemical solution as a distinction can then be made between conduction- and valence-band current flow. This is accomplished by the use of specific chemical species in solution and the appropriate biasing which then allows only interaction with one band. The current is measured under the application of monochromatic sub-band-gap light as it is scanned from midgap to band-edge energies. This gives the accumulated trap density as successive traps are affected. The samples are illuminated from the back of the crystal to avoid absorption by the solution and to allow uniform illumination of all contacts (on the front). From the photoconductive scans (anodic, cathodic, and solid state) and the bias (I-V) dependence the magnitude and nature of trap levels in the gallium arsenide crystal could be determined. EL2 levels at 0.8 and 1.07 eV below the conduction band with a total density of about 1016 cm−3 were seen. Cr appears to form an impurity band at 0.8 eV above the valence band so that with the EL2 level (just below) it brackets the Fermi level. The effect of white light on the front surface of the sample during sub-band-gap scans was also examined and finally the effect of copper doping was studied.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336894
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  • 9
    Electronic Resource
    Electronic Resource
    Hole injection into single- and polycrystalline silicon electrodes (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2051-2056 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of this paper is to examine hole injection into either the valence band of single-crystal silicon or into the grain-boundary levels of polycrystalline silicon from various oxidizing ions in solution. The results for single crystals did not follow the simple picture one gets from comparing the redox potentials to the position of the silicon valence band edge. It is concluded that the band edges are shifted up by a hydride layer on the silicon surface. A solution of ferric EDTA (ethylene diamine tetraacetic acid) and 1% HF did not exhibit injection into the valence band and was used to test for hole injection into grain-boundary levels. This grain-boundary injection was definitely observed but exhibited a marked time dependence (decay). This is best interpreted as a form of hydrogen passivation (by the cathodic injection of protons).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334395
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  • 10
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    Conditional Discrimination: The Development of Discrimination With and Without Verbal Report. (1937)
    Urbana, etc. : Periodicals Archive Online (PAO)
    American Journal of Psychology. 49 (1937) 564 
    Details
    ISSN: 0002-9556
    Topics: Psychology
    Notes: ARTICLES AND NOTES
    URL: http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pao:&rft_dat=xri:pao:article:1016-1937-000-00-000011
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