Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Resputtering effects on the stoichiometry of YBa2Cu3Ox thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 390-395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energetic particle bombardment of the substrate during deposition will under certain process conditions adversely affect the properties of YBa2Cu3Ox thin films. Films were grown by dc magnetron sputtering from stoichiometric compound targets in a planar geometry. An increased oxygen fraction in the sputtering gas entailed a drastic decrease in the film deposition rate. Etching of the substrates was observed in pure oxygen plasmas for pressures below 2 Pa. For the whole range of sputtering gas mixtures, the film composition deteriorated if too low total pressures were used; that is, even if pure argon was used as working gas. Copper deficiency was observed under these conditions and attributed to resputtering of the growing film by energetic particles. This conclusion was supported by the copper deficiency observed in films grown at negative substrate bias, i.e., during ion bombardment from argon plasmas. The origin of various energetic particles during normal sputtering is discussed. We concluded that oxygen neutrals were responsible for the resputtering. At elevated substrate temperatures the film composition was more sensitive to resputtering than at low temperatures. If the energetic oxygen particles were thermalized, stoichiometric films were grown at temperatures up to at least 760 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347727
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction study of CoSi2 formation during annealing of a Co/Ti bilayer on Si(100) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6730-6732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray diffraction was performed in situ during annealing of a Co/Ti/Si(001) multilayer, which produced an epitaxial CoSi2 layer. The results indicate that the Ti layer did not stay intact during the reaction, and thus could not act like a membrane, moderating Co/Si interdiffusion. Strongly textured phases (M) formed prior to CoSi2 nucleation, and was unobservable upon completion of the anneal. Nucleation and growth of CoSi2 on Si(001) took place in the presence of M, new Co-Ti-(O) phases that were located at the metal/Si interface, and thus M might play an important role in the perfection of the silicide. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359091
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Formation of Cu-rich particles on the surface of YBa2Cu3O7−x thin film grown by in situ off-axis sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2020-2025 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experiments on the formation of Cu-rich particles on the surface of high quality YBa2Cu3O7−x thin films have been carried out systematically. The films on (001) LaAlO3 were grown using in situ off-axis sputtering. The particle formation observed in our experiment can be described using a classical thin film nucleation and growth model based on the concept of capture zones. In the temperature range from 670 to 750 °C, the nuclei density saturates at the early stage of deposition, and the formation of the Cu-rich particle belongs to the case of initial complete condensation. The saturation nuclei density of the particles N decreases as the temperature increases. It has been also found that N is deposition rate dependent and substrate dependent. Based on the experiments, the activation energy for surface diffusion of the Cu atoms that form the particles is estimated to be 1.5 eV in this temperature range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356302
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Target presputtering effects on stoichiometry and deposition rate of Y-Ba-Cu-O thin films grown by dc magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1907-1909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Y-Ba-Cu-O thin films have been grown from stoichiometric compound targets using dc magnetron sputtering. Initially, the film composition was strongly off-stoichiometric and the deposition rate very low. However, after extensive presputtering, stoichiometric films, with respect to the metal content, were deposited at a rate of 2–2.5 A(ring)/s. The long presputtering time (20–30 h) needed is due to a slowly changing oxygen content on the target surface. This is caused not only by preferential sputtering effects, but also by bulk diffusion in the target. The presputtering time is significantly decreased if the target is annealed in an argon atmosphere prior to use. Oxygen adsorbed on the target surface during venting of the chamber will also affect the process significantly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99740
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    In situ x-ray diffraction study of the role of annealing ambient in epitaxial CoSi2 growth from Co/Ti bilayers on Si(001) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1597-1599 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reactions during annealing of a Co/Ti bilayer structure on Si(001) were studied in situ to reveal the roles of the Ti interlayer and the annealing ambient on the formation of epitaxial CoSi2. We shown that an oxygen contaminant in the nitrogen annealing gas is needed to form a stable, Co–Ti–O (spinel) membrane at the metal/Si interface that limits diffusion and is crucial for the perfection of epitaxial CoSi2. Annealing in vacuum or otherwise inert environments led to polycrystalline CoSi2 films and no spinel phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114951
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...