Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 2940-2942
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Relaxed, epitaxial SiGe layers with low densities of threading dislocations are grown by linearly grading the Ge composition. However, such compositionally graded SiGe layers (virtual substrates) often result in a cross hatch surface morphology which affects subsequent device processing. Here, we report on high-resolution channeling-contrast-microscopy (CCM) measurements on such virtual substrates grown by gas-source molecular-beam epitaxy and low-pressure chemical vapor deposition. A two-MeV He+ beam focused to a submicron spot is used in these CCM measurements to obtain both lateral and depth-resolved information on the cross hatch features observed and their association with a slight lattice tilt. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1474597
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