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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1671-1676 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recently, it has been shown that, upon cooling, disordered Pb(Sc1/2Ta1/2)O3 ceramics transform spontaneously from a relaxor state to a ferroelectric state when processed in a manner that suppresses lead vacancies. If lead vacancies are present, the spontaneous ferroelectric transition is suppressed and the ceramics exhibit the usual relaxor behavior in a wide temperature range. It is shown that disordered Pb(Sc1/2Nb1/2)O3 ceramics have a similar nature: When produced in a manner that does not eliminate lead vacancies, they exhibit normal relaxor behavior. However, if stoichiometry is tightly controlled, disordered Pb(Sc1/2Nb1/2)O3 transforms spontaneously (under zero-bias field) from a relaxor into a normal ferroelectric upon cooling. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2086-2092 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Complex perovskite A(B'B‘)O3 ceramics with various degrees of B-site order have been structurally and spectroscopically characterized by means of x-ray diffraction, transmission electron microscopy, and infrared reflectivity. In Ba(Fe1/2Nb1/2)O3 and Pb(Fe1/2Nb1/2)O3, no order could be detected whereas Pb(In1/2Nb1/2)O3, Pb(Mg1/3Nb2/3)O3, and Pb(Sc1/2Ta1/2)O3 (unannealed) all exhibited weak reflections associated with small ordered regions Pb(Sc1/2Ta1/2)O3 was also prepared by appropriate heat treatment in the fully ordered form and exhibited strong maxima arising from the ordered superlattice in both electron and x-ray diffraction. The infrared reflectivity (30–4000 cm−1) revealed correlation between the degree of ordering and appearance of the extra mode in the 260–320 cm−1 range assigned to B'–B‘ vibrations. Despite an apparently low volume fraction of "ordered material'' in "partially ordered'' samples of Pb(Sc1/2Ta1/2)O3, the extra mode was observable. It is suggested that infrared spectroscopy is sensitive to short-range ordering down to the nm range which is proposed to exist in between the small regions of order.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2623-2630 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The switching of the sandwich structure "ferroelectric+thin dielectric layer'' is theoretically studied. The behavior of the remanent polarization, Pr, coercive field, Ec, maximal polarization on the loop, Ps, and the slope of the hysteresis loop at Ec as a function of both, the relative thickness of the layer (the thickness of the dielectric divided by the thickness of the ferroelectric) and the amplitude of the measuring field, is analyzed. It is shown that the effect of the layer on Pr and the slope at Ec is qualitatively different from that on Ec and Ps. As the result of this analysis the set of characteristic features of the sandwich with the variable relative thickness of the dielectric layer have been have formulated. These characteristic features can be used for the identification of the presence of such a dielectric layer using the data on the switching parameters of the system. It is shown that the increase of the coercive field with increasing relative thickness of the dielectric layer, which was considered as an important sign of the presence of the dielectric layer, is not a real property of the sandwich structure but rather an artifact of the approximations which were used in the analysis performed by the previous workers. In fact, Ec is a decreasing function of the relative thickness of the dielectric layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5864-5873 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The goal of this work was to understand the correlation between microscopic material parameters and the dielectric function of candidate materials for applications in the microwave frequency range. The structure and dielectric properties of Ba2+(Y3+1/2Ta5+1/2)O3 (BYT), a typical representative of the Ba(B3+1/2B5+1/2)O3 complex perovskite family, has been investigated from 102 to 1014 Hz and from 20 to 600 K. At Tc=253±1 K, BYT undergoes an equitranslational improper ferroelastic, second-order phase transition, characterized by the tilting of the oxygen octahedra. The space group symmetry changes from Fm3¯m, in the high temperature phase, to I4/m below Tc. The existence of an intermediate temperature region (Tc−40〈T〈Tc) has been observed, where the compound exhibits structural and dielectric properties different from those in the well-defined high (T(approximately-greater-than)Tc) and low (T〈Tc−40 K) temperature phases. Infrared reflectivity (1012–1014 Hz) and submillimeter transmission (1011–3×1012 Hz) measurements yield dielectric losses which are believed to be mainly of intrinsic origin (one- and two-phonon absorption). Comparing a theory of two-phonon difference absorption processes, due to thermally activated polar branches, with the loss measured at 400–1400 GHz, the intrinsic loss can be extrapolated to lower frequencies. At 10 GHz the extrapolated value is about 1/4 of the loss actually measured in a BYT resonator. Nonpolar phonons, including the soft branch, which have not been considered for the extrapolation procedure, are partially responsible. The temperature dependencies indicate the soft branch to be of considerable importance for intrinsic losses. Oxygen vacancies can be excluded as an extrinsic loss source, as sintering and annealing in N2, air, and O2 had no measurable influence on the loss at 10 GHz.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4126-4130 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dielectric properties of single crystals of LaGaO3 have been measured at low frequencies as well as in the microwave region over a wide temperature range. Measurements performed on two crystal orientations, viz. (001) and (110), show dielectric anomalies at a transition near 145 °C. Dielectric anisotropy below, but not above, 145 °C confirm the previously reported orthorhombic symmetry at room temperature and rhombohedral symmetry above 145 °C. Domain wall motion which arises as a result of a phase transition has been observed around 145 °C.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4668-4675 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Losses in piezoelectrics are approached by considering a description of direct stress–charge displacement hysteresis. Shortcomings of the usual loss models (viscous and Rayleigh, taken separately) are briefly demonstrated. Then, a mixed model for piezoelectric losses superimposing viscous and Rayleigh types of descriptions is proposed and validated for a modified lead titanate and lead zirconate titanate (PZT). It is shown for PZT that viscous and Rayleigh-like loss contributions can be effectively separated by fitting the piezoelectric hysteresis loop with an expression combining the two lossy responses. The possibility to obtain all the necessary parameters that describe piezoelectric stress nonlinearity from one single piezoelectric loop is also demonstrated in the case of PZT. The origins of the mixed loss behavior are interpreted as arising from domain wall motion in terms of internal friction mechanisms and of pinning energy ranges. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5708-5712 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a serial bilayer model we show that heterogeneous ferroelectric systems may exhibit substantial Maxwell–Wagner piezoelectric relaxation. The relaxation has its origin in the coupling of the dielectric and piezoelectric properties. The model predicts both retardation (positive phase angle and counterclockwise charge–pressure hysteresis) and relaxation (negative phase angle and clockwise charge–pressure hysteresis) of the longitudinal direct piezoelectric coefficient. The theoretical results are confirmed experimentally in ferroelectric ceramic–ceramic bilayers and in a single-phase ferroelectric Aurivillius compound ceramic in which neighboring grains with strongly anisotropic properties may behave as basic Maxwell–Wagner units. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5067-5074 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Piezoelectric response nonlinearity is approached using the Preisach description of hysteretic systems as collection of distributed bistable units. The Preisach model and its recent physical interpretation in terms of moving domain wall in a stochastically described pinning field are reviewed. It is shown that such an approach can effectively render not only the piezoelectric coefficient field dependences but also the field-response hysteresis, especially in the well-known case of linear piezoelectric field dependence (i.e., Rayleigh's law) where the bistable units are distributed homogeneously. New expressions for piezoelectric nonlinear behavior departing from the classical linear dependence are then derived using a more complex distribution and are qualitatively compared to experimental data for piezoelectric materials as varied as lead titanate, strontium bismuth titanate, and lead zirconate titanate. Finally, these expressions are shown to be adequate for the description of various piezoelectric coefficient behaviors such as: polynomial dependence on the applied field, dc field effect on nonlinear contributions, and threshold field for nonlinearity. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1935-1941 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Interferometric measurements of electric field-induced displacements in piezoelectric thin films using single-beam and double-beam optical detection schemes are reported. It is shown that vibrational response measured with a single-beam interferometer includes a large contribution of the bending motion of substrate. Therefore, it is difficult to apply single-beam technique for piezoelectric measurements in thin films. To suppress the bending effect a high-resolution double-beam interferometer is proposed. The sensitivity of the interferometer is significantly improved in comparison with previously reported system. The interferometer is shown to resolve small displacements without using a lock-in technique. An example of the interferometric capabilities is demonstrated with experimental results on electric field, frequency, and time dependences of piezoelectric response for quartz and Pb(Zr,Ti)O3 thin film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1387-1402 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reduction in switchable polarization of ferroelectric thin films due to electrical stress (polarization fatigue) is a major problem in ferroelectric nonvolatile memories. There is a large body of available experimental data and a number of existing models which address this issue, however the origin of this phenomena is still not properly understood. This work synthesizes the current experimental data, models, and approaches in order to draw conclusions on the relative importance of different macro- and microscopic scenarios of fatigue. Special attention is paid to the role of oxygen vacancy migration and electron injection into the film and it is concluded that the latter plays the predominant role. Experiments and problems for theoretical investigations, which can contribute to the further elucidation of polarization fatigue mechanisms in ferroelectric thin films, are suggested. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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