ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The conditions necessary for obtaining both the maximum topographical image contrast and the maximum insensitivity to ion induced damage using ion-beam induced charge microscopy are presented and interpreted in terms of existing energy loss and damage theory. Ion-beam induced charge images and pulse-height spectra which are measured from a Sandia SA3002 memory device using MeV H+, H+2, and 4He+ ions with a range of incident energies are used to characterize these optimum experimental conditions. It is shown that ions which are stopped within the device depletion layers generate charge pulses which are much less sensitive to ion induced damage than longer range ions which are stopped in the device substrate. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358613
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