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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 5135-5145 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The existence of Cu overlayers on O/W(110) and CO/W(110) was investigated using thermal desorption, work function, UPS, XPS, and energy loss measurements. It was shown that these layers exist and have very different properties from O/Cu/W(110) and CO/Cu/W(110), respectively. The most striking fact is that the work function at Cu monolayer coverage (slightly higher in the case of CO/W(110), probably because of Cu second layer formation and gaps in the first Cu layer) is almost that of Cu1/W(110) regardless of the underlying adsorbate. HeI UPS spectra show a Cu d-band structure even at Cu submonolayer coverages for Cu/O/W and for Cu1/CO/W(110). A loss peak at 4.64 eV was found for both systems [and for Cu8/W(110)] at θCu≥0.2 for O/W(110), and at θCu≥0.6 for CO/W(110). This is tentatively interpreted as a Cu interband transition. Unexpectedly small shifts in Cu2p3/2 and O1s binding energies were found under all conditions; the reasons for the virtual absence of shifts are not understood. The main conclusion of this work is that overlayers of Cu on top of other adsorbates show metallic properties even at submonolayer Cu coverages.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 909-917 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-induced gas-assisted charging (PIGAC) of 1.5 nm thick SiO2 overlayers by photoemission from the Si substrate is demonstrated to be a universal feature for all gases. In our case (multi)photoemission is induced by high-intensity 800 nm, 150 fs pulses in samples at 295 K. O2 is more effective than other gases, probably due to the accumulation of surface charge following the formation of O2− on the surface. For the other gases, the efficiency decreases with increasing molecular (or atomic) size, pointing to a mechanism that is dependent on the proximity of the gas molecules to charge traps. Combined measurements of photoemission current and the contact-potential-difference detected charge spillover from the irradiated spot to the rest of the surface. Transfer of PIGAC electrons to long-lifetime charge traps was also detected for all gases. Its efficiency is the highest for He, probably due to the larger effective surface (and thus larger PIGAC) created by He penetration into the oxide layer. Detrapping of trapped electrons also occurs with PIGAC, and is particularly effective for CO and H2. Its mechanism and gas specificity are not understood as yet, but the strong increase of detrapping with decreasing temperature suggests a dependence on longer proximity of the gas molecules to the traps due to an increased surface residence time. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 896-908 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient trapping/detrapping of electrons at the Si(100)/SiO2 outer surface is studied studied in vacuum or with an O2 ambient (between 10−3 and 30 Torr) following internal electron photoemission from Si. Photoemission-current (produced by a 150 fs, 800 nm laser source) and contact-potential-difference techniques were used to investigate a wide variety of n- and p-doped samples at 300 K with thermally grown, steam grown, and dry oxides with thickness ≤5 nm as well as samples with the oxide layers removed. Characteristics of the steam grown oxide were also studied at 400 and 200 K. For samples in vacuum charging is attributed to direct filling of at least two families of traps, one related to the oxide and the other the Si/SiO2 interface. For samples in O2, details of oxygen-assisted surface charging as reported previously [Phys. Rev. Lett. 77, 920 (1996)] are given. A fast, Coulomb-repulsion driven spillover of surface charge from the irradiated spot to the rest of the surface was detected. Oxygen aids trap filling of the in-vacuum filled and gas-sensitive traps and also detrapping (the efficacy of which increases strongly from 400 to 200 K) when the optical excitation source is removed. Surface transient charging and charge trapping efficacy for the oxidized samples are not very sensitive to sample preparation. A mobility of the trapped charges, probably hopping between traps and also Coulomb-repulsion driven, was measured. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1136-1138 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron irradiation on CdCl2 thin films was studied using Auger and electron loss spectroscopies. It was found that coloration takes place together with a reduction of the Cl/Cd intensity ratio. The loss spectrum is also changed during irradiation. It was shown that the irradiation-induced changes can diffuse out of the irradiated area.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 34 (1978), S. 662-666 
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The compound Bi2Fe4O9 belongs to the space group Pbam ( D92h), with two formula units per unit cell. Neutron diffraction measurements showed that it is paramagnetic at room temperature and undergoes a transition to an antiferromagnetic state at TN = (264 ± 3) K in agreement with previous susceptibility and Mössbauer measurements. Analysis of the 80 K neutron diffraction pattern yielded a magnetic structure with the following features: (a) The basic translations ao, bo, co of the chemical lattice change into antitranslations in the magnetic lattice. (b) The spins are perpendicular to co. (c) The magnetic structure belongs to the PC2/m space group and is a basis vector to an irreducible space under the Pbam irreducible representations, in accord with Landau's theory of second-order phase transition. The position parameters of the Fe3+ ions in the unit cell were refined. The magnetic moment of the compound was found to be (4.95 ± 0.08) μB, compared with the value of 5 μB for the Fe3+ free ion. The temperature dependence of the { 131 } magnetic reflection peak intensity was measured and found to be in agreement with the sublattice magnetization predicted by the molecular field approximation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 231 (1990), S. 344-355 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 185 (1987), S. 413-430 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 231 (1990), S. 333-343 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 130 (1983), S. 361-372 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Surface Science 202 (1988), S. 227-237 
    ISSN: 0039-6028
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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