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  • 1
    Electronic Resource
    Electronic Resource
    Sintering Temperature Study of Hot-Pressed Y-SiAlON Ceramics (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 905-907 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In order to investigate the effect of sintering temperature on the microstructure and densificationprocess of Y-SiAlON ceramics, by hot pressing at 1750°, 1800°, 1850° and 1900°C for 1 h, respectively,Y-α-SiAlON (m=1.2, n=1.2 according to formula Mm/3Si12-(m+n)Alm+nOnN16-n) was fabricated fromα-Si3N4, AlN, Al2O3 and Y2O3 starting powers. The results showed that α-SiAlON phase is formed in allsintered specimens, and during Y-SiAlON sintering, all the samples begin to quickly shrink at 1550°C,and the shrinkage is finished at 1750°C, which indicate that 1550 ~ 1750 °C is very important for thedensification process of Y-α-SiAlON ceramics, and 1750 °C is necessary for the Y-SiAlON densification.Higher sintering temperature contributes to α-SiAlON grain development and the SiAlON ceramicsdensification
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.905.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of Incident Angle on Microstructure of Ni-Cr Film Deposited by PVD (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 373-374 (Mar. 2008), p. 184-187 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: A 2D kinetic Monte Carlo (KMC) simulation has been applied to study the microstructureof Ni-Cr film deposited by physical vapor deposition (PVD) for variable incident angle. In the KMCmethod, two phenomena were incorporated: adatom-surface collision and adatom diffusion, theinteraction between atoms was described by embedded atom method and jumping energy wascalculated by molecular statics calculations, initial location of adatom was located by MomentumScheme. The results reveal that there exists critical incident angle, which is 35˚ for Ni-Cr thin film.When incident angle is less than 35˚, incident angle have less affect on surface roughness factor andpacking density, compact films with smooth surface are obtained, their surface roughness factor isbellow 1.12 and packing density is more than 99.6%. However, when incident angle is more than 35˚,surface roughness factor increases quickly and packing density decreases sharply with incident angleincreasing: surface roughness factor increase to 1.5 and 2.3 for incident angle of 45˚ and 60˚respectively, packing density is below 99% and 96% accordingly. Which reveal that theself-shadowing effect emphasizes with incident angle increasing when the incident angle is more than35˚
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/57/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.373-374.184.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Multi-Step Sintering Method Study of HP Y-SiAlON Ceramics (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 908-909 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Multi-step hot pressing sintering was adopted to prepare Y-SiAlON (Y0.4Si9.6Al2.4O1.2N14.8) at1950°C for 60 min under 25 Mpa in nitrogen atmosphere, and the microstructure was studied. The phaseassemblages, microstructures and densification of the sintered samples were discussed in detail. In orderto contrast to multi-step sintering, one step sintering also was adopted. The results reveal that single-phaseα-SiAlON with elongated grain pattern is formed in the multi-step sintering specimens, because ofholding at low temperature in multi-step sintering is helpful to reduce the kinetics of crystal growth, themount of elongated grain in multi-step sintering samples is more than that of in one step sintering ones
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.908.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Kinetic Monte Carlo Study of Void Distribution in Nickel Thin Film by Physical Vapor Deposition (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 1153-1156 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: 2D kinetic Monte Carlo simulation has been used to study the voiddistribution of nickel thin film prepared by physical vapor deposition, and embeddedatom method (EAM) was used to represent the interatomic interaction. Packingdensity and surface roughness were studied as the functions of deposition rate,substrate temperature and incident angle. The results reveal the existence of criticalsubstrate temperature and critical incident angle, and higher substrate temperature,lower deposition rate and appropriate incident angle are advantaged to prepare thecompact thin film with excellent mechanical properties
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.1153.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    Surface Morphology of Thin Film Deposited on Rotating Substrate by EB-PVD (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 336-338 (Apr. 2007), p. 2238-2241 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The thin film deposited by electron beam physical vapor deposition (EB-PVD) on rotatingsubstrate was approached via a kinetic Monte Carlo (KMC) algorithm on a “surface” of tight-packed rows.The motivation is to study the surface morphology distribution of thin film along the substrate radial.Effective deposition rate model and effective incident angle model were established along the substrateradial. Two phenomena are incorporated in the KMC simulation: adatom-surface collision and adatomdiffusion. The KMC simulations show that the surface roughness of thin film is small and the changing ofsurface roughness is small near the side of rotation axis, however, the surface roughness is big near theside of substrate edge, and the surface roughness increases quickly with the increasing of substrate radiuswhen r〉300 mm. The simulation results indicate that the effective incident angle is the main factor tocause the changing of surface roughness: the effective incident angle does not reach critical value and thedeposition rate difference is small when the radius is less than 300 mm, so the surface roughness of thinfilm in the scope is small and its changing is small, but when r〉300 mm, the effective incident anglesincrease sharply with radius increasing and all of them are above the critical value, which cause surfaceroughness of thin film to increase quickly. Experiments reveal that the KMC method can predict surfaceroughness distribution of thin film deposited by EB-PVD on rotating substrate
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/53/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.336-338.2238.pdf
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