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  • 1
    Electronic Resource
    Electronic Resource
    Quantum corrections to the conductivity and quantum Hall effect in GaAs-GaAlAs multiple quantum well structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2081-2085 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetotransport properties of GaAs-GaAlAs multiple quantum well structures, with widths of the quantum wells Lw=33–66 A(ring), have been investigated over a wide temperature and field range. The variation of the electron mobility with Lw (and temperature) can be accounted for by interface roughness scattering. A negative magnetoresistance was observed. An analysis within the theory of weak localization allowed us to evaluate the relaxation time of the phase of the electronic wave function and its temperature dependence τcursive-phi(T). Measurements in high-magnetic fields (up to 40 T) at T=4.2 K revealed pronounced Shubnikov-de Haas oscillations and the quantum Hall effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356312
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Energy spectrum of a GaAs (δ-Sn) structure on a vicinal face (1997)
    Springer
    Physics of the solid state 39 (1997), S. 1655-1658 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The potential profile, electron energy levels, and corresponding wave functions are calculated for a gallium-arsenide structure with a δ-doped tin vicinal face GaAs(0.3°, δ-Sn). Calculated values of the electron densities in the subbands agree well with the quantities obtained from an analysis of the Shubnikov-de Haas oscillations and photoluminescence spectra of the structure. On the basis of the calculated band diagram the lines observed in the photoluminescence spectrum of the GaAs(0.3°, δ-Sn) structure are identified here for the first time as associated with electron transitions on the size-quantization levels in the tin δ-layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1129883
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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