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  • 1
    Electronic Resource
    Electronic Resource
    Optical parameters of a magnetized space-charge neutral group IV semiconductor (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4910-4916 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using a hydrodynamic model of semiconductor plasmas, we report an analytical investigation of hot-carrier induced nonlinearity and its impact on the optical parameters (refractive index and absorption coefficient) of a magnetized, space-charge neutral group IV semiconductor. The carrier heating by the pump is assumed to induce nonlinearity in the medium through momentum transfer collision frequency ν of the carriers and space-charge neutrality of the medium. For the linear optical parameters (nl, al), both electrons and holes are found to contribute resonantly at high frequency of the pump (ω0(approximate)ωce). For the nonlinear optical parameters (n2, a2), the holes contribute significantly in the low pump frequency regime (ω0(approximate)ωch,) whereas in the high pump frequency regime (ω0(approximate)ωce), both kinds of carriers contribute resonantly in which a much larger contribution comes from the electrons. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456245
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  • 2
    Electronic Resource
    Electronic Resource
    Optical parameters of a magnetized semiconductor plasma with nonparabolic band structure (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4741-4746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical parameters (linear and nonlinear) and dispersion characteristics of a III–V compound semiconductor plasma subjected to a strong transverse magnetic field have been investigated theoretically. The nonlinearity induced in the medium has been attributed to heating of the carriers by the pump that results in modification of the electron effective mass in a nonparabolic conduction band and the momentum transfer collision frequency of electrons. The external magnetic field is found to have two consequences: (a) increasing the nonlinearity of the medium and (b) modifying the dispersion characteristics and determining the direction of energy flow between the pump and the generated waves. The plasma frequency ωp is found to enhance the magnitude of the optical parameters as usual. For a typical n-InSb semiconductor, linear refractive index and nonlinear refractive index coefficients are found maximum (nl=5.3, nnl=2×10−10 m2 V−2) whereas absorption coefficients al (linear) and anl (nonlinear) are found to vanish when ωo resonates with ωc(=1.138×1014 s−1). The present study once again establishes the device potentials of n-InSb. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1358315
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    Paper (German National Licenses)
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