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  • 1
    Electronic Resource
    Electronic Resource
    Leitfähigkeitsuntersuchungen an Anthrazen-Kristallen bei Anregung mit Protonenimpulsen (1970)
    Springer
    The European physical journal 236 (1970), S. 383-402 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Transient currents in anthracene crystals were measured under bombardment by pulses of 700 keV protons. Electron-hole-pairs are generated by an intrinsic process, the yield varying linearly with the intensity of the bombarding beam. The average energy for pair production is found to be 104 eV. The temperature dependence of the carrier yield can be characterized by an activation energy of 0.07 eV. The results are discussed with regard to different models of the generation process. Drift mobilities of 0.46 cm2/Vsec for electrons and 0.88 cm2/Vsec for holes are determined in good agreement with other authors. A reduction of the current pulse height with the number of bombarding pulses is observed and explained in analogy to the known deterioration of luminescence under ion bombardment. Thereby the higher deterioration constant for the conductivity can be understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01402407
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  • 2
    Electronic Resource
    Electronic Resource
    Electron-nuclear double resonance of deep-boron acceptors in silicon carbide (1996)
    Springer
    JETP letters 63 (1996), S. 848-854 
    Details
    ISSN: 1090-6487
    Keywords: 61.72.Ji ; 76.70.Dx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Electron-nuclear double resonance spectra of deep-boron acceptors in silicon carbide have been observed. The quadrupole and hyperfine interaction constants are determined. A sharp decrease of the quadrupole interaction and suppression of the anisotropic part of the hyperfine interaction, as compared with shallow-boron acceptors, are found. The observed effects are explained by the motion of holes inside the deep-boron acceptor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567101
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    Paper (German National Licenses)
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