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  • 1
    Electronic Resource
    Electronic Resource
    Growth of GaInAsP using ethyldimethylindium and tertiarybutylphosphine (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2006-2008 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of GaInAsP lattice matched to GaAs by organometallic vapor phase epitaxy using ethyldimethylindium and tertiarybutylphosphine is reported for the first time. The composition of the films is approximately Ga0.87In0.13As0.75P0.25, giving a band gap of about 1.52 eV. Intrinsic films are n type. Both n- and p-type doped layers have been prepared. Photoluminescence measurements on intrinsic films give spectral half widths of about 70 meV. Capping the films with AlGaAs window layers and using n+-n, high-low junctions at the GaInAsP/GaAs interface greatly improve the photoluminescent properties. A minority-carrier lifetime of 35 ns in an intrinsic film has been measured and suggests that the quaternary is equivalent to AlGaAs with the same band gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105022
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence of porous silicon buried underneath epitaxial GaP (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 889-891 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent observations of visible, room-temperature photoluminescence in porous Si have stimulated research aimed at the realization of efficient, Si-based electroluminescent devices. To achieve electroluminescence, it may be beneficial to generate carriers with sufficient energy to populate the states of the quantum-confined Si structures. A viable method to accomplish this is to utilize a wide-band-gap heterojunction injector, such as GaP. Toward that end, we report the successful formation of porous Si buried underneath GaP islands, and we demonstrate that the buried porous Si layer exhibits strong photoluminescence (λ≈7000 A(ring)).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106495
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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