Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    High-quality InGaN/GaN multiple quantum wells grown on Ga-polarity GaN by plasma-assisted molecular-beam epitaxy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5731-5733 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality InGaN/GaN multiple-quantum wells (MQWs) with different In fractions varying from 0.04 to 0.30 have been grown on Ga-polarity GaN by N2 plasma-assisted molecular-beam epitaxy (rf-MBE). High-resolution x-ray diffraction results have indicated that the high interface quality and good reproducibility of the InGaN QW have been achieved. Photoluminescence spectra reveals the superior and intense luminescence properties of InGaN MQWs from ultraviolet (∼388 nm) to green-yellow (∼528 nm) range. We have shown that the Ga-polarity GaN underneath is the key parameter for the successful growth of InGaN MQWs by rf-MBE. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1360705
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Stimulated-emission phenomena from InGaN/GaN multiple-quantum wells grown by plasma-assisted molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1599-1601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence measurements at 5 K were performed to study the optical properties of InGaN/GaN multiple-quantum wells (MQWs) grown by plasma-assisted molecular-beam epitaxy (rf-MBE). Stimulated-emission (SE) phenomena by optical pumping were observed under the high-excitation density from the InGaN/GaN MQW samples with the In composition varying from 0.04 to 0.16. It was found that the threshold density for SE phenomena strongly depended on the In composition, where the lowest threshold density was 69 μJ/cm2 from our samples. Our results show a potential of rf-MBE technique for the future optical device applications. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1402650
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Stability of N- and Ga-polarity GaN surfaces during the growth interruption studied by reflection high-energy electron diffraction (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4013-4015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films with N- and Ga-polarity were grown on sapphire (0001) substrates using different buffer layers by plasma-assisted molecular-beam epitaxy. The surface stability of each lattice-polarity film during the growth interruption was studied by reflection high-energy electron diffraction (RHEED). It was found that the surface of N-polarity film was unstable against the exposure to the nitrogen plasma flux, while that of Ga-polarity one was stable. This provides a method to clarify the lattice polarity by the in situ RHEED observation directly. A model is proposed to explain the observed phenomenon, where the origin of the phenomenon is mainly attributed to the differences in surface dynamics processes and morphologies between the two kinds of lattice-polarity films. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333685
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...