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Influence of different types of threading dislocations on the carrier mobility and photoluminescence in epitaxial GaN (2002)

Shi, J. Y. ; Yu, L. P. ; Wang, Y. Z. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 80 (2002), S. 2293-2295

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: High-resolution x-ray diffraction has been used to analyze the type and density of threading dislocations in a series (0001)-oriented GaN epitaxial film. Photoluminescence (PL) and carrier mobility of the films are measured at room temperature. The intensities of both the band edge (3.42 eV) peak and yellow luminescence (YL) are strongly related to the threading dislocation density of the GaN films. But different types of dislocations show different relationship with the intensities of PL and YL. The fundamental correlation is found not only between the interaction of edge- and screw-type dislocations and the carrier mobility but also between the interaction and the intensities of both the band edge peak and the YL. © 2002 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1465531

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