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  • 1
    Electronic Resource
    Electronic Resource
    Simplified three-dimensional computer simulation formulae for film thickness distribution in the LPCVD process
    Amsterdam : Elsevier
    Solid State Electronics 29 (1986), S. 999-1004 
    Details
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1101(86)90099-7
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization and physical analysis of epitaxial CoSi2 grown from the Si〈100〉/Ti/Co system (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 952-961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and structural properties of epitaxial CoSi2 layers grown on Si by solid-state interaction between Ti/Co bimetallic layers and Si〈100〉 substrates have been investigated. The Schottky barrier height (SBH) of the CoSi2–Si contact determined by current–voltage characteristics at room temperature varies between 0.64 and 0.71 eV on the n-type substrates and between 0.47 and 0.43 eV on the p-type substrates. The variation of the SBH is found to be related to the interfacial properties at the CoSi2–Si contact which is in turn determined by the heat treatment used for the CoSi2 formation. The formation of polycrystalline CoSi2 is found to be responsible for the low SBH deviated from 0.71 eV on the n-type substrates and the high SBH deviated from 0.43 eV on the p-type substrates. The formation of a ternary compound, identified as Co16Ti6Si7, within the epitaxial CoSi2 does not seem to affect the SBH on the n-type substrates. A permeable base transistor (PBT) was fabricated using the epitaxial CoSi2 for self-aligned contact metallization. The current–voltage characteristics of the PBTs are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362907
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Alternative pathway for the formation of C54 TiSi2 (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 704-706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of interfacial Mo on the formation of TiSi2 is studied using 120 nm Ti layers deposited on Si (100) substrates. After annealing at 450 °C, C54 TiSi2 and C40 (Ti,Mo)Si2 are found in the samples initially having an interposed layer of Mo 1.6–2 nm thick. In the absence of Mo, only C49 TiSi2 is obtained. The pathway for the formation of C54 TiSi2 is altered from the usual C49–C54 phase transformation to the epitaxial growth of C54 TiSi2 on C40 (Ti,Mo)Si2. The resistivity of the TiSi2 layers formed is about 14 and 61 μΩ cm for the C54 and C49 phase, respectively. However, for equal annealing time, the thickness of the C49 TiSi2 formed is about ten times that of the C54 TiSi2 grown on C40 (Ti,Mo)Si2, because of the barrier effects on Mo or C40 (Ti,Mo)Si2 on Si diffusion. The experimental results are discussed on the basis of energetic arguments to account for the suppressed formation of C49 TiSi2 and the enhanced formation of C54 TiSi2 at 450 °C. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370789
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  • 4
    Electronic Resource
    Electronic Resource
    Phase formation and resistivity in the ternary system Ti–Nb–Si (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2323-2329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present measurements of the pseudobinary phase diagram of the TiSi2–NbSi2 system. This disilicide system has recently become important because of the enhanced formation of the low resistivity C54 phase of TiSi2 by addition of Nb. The solubility limit of Nb in C54 TiSi2 at 1000 °C is found to lie between 10% and 16% at the metal site, and the solubility limit of Ti in C40 NbSi2 at 1000 °C is between 76% and 79.5% at the metal site. Adding Nb to C54 TiSi2 increases the unit cell volume at a rate of 0.035% per at. % Nb. Adding Nb to C40 (Ti,Nb)Si2 increases the unit cell volume at a rate of 0.034% per at. % Nb. The presence of Nb enhances the formation of the C54 phase and improves its thermal stability. The desirable low resistivity of the C54 phase is increased by 1.2 μΩ cm per at. % Nb. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371049
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