Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Schottky barrier heights of InxAl1−xAs (0≤x≤0.35) epilayers on GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1813-1815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical characteristics of Al Schottky diodes on n-type InxAl1−xAs (0≤x≤0.35) were investigated in detail by current-voltage and capacitance-voltage measurements. These high-quality InAlAs epilayers were grown on GaAs using step-graded buffers under proper growth conditions. It was found that the Schottky barrier height of the epilayers increases with Al content as opposed to what was predicted previously. The effect of the interfacial oxide layer on the determination of Schottky barrier height is also presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359545
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Study of the optical properties of In0.52(AlxGa1−x)0.48As by variable angle spectroscopic ellipsometry (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 442-445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties of In0.52(AlxGa1−x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310–1700 nm. The refractive indexes were determined and could be given as n(x)=0.12x2–0.51x+3.6 at the wavelength of 1.55 μm. The measured thickness of the epilayers agrees within 5.2% of the nominal thickness. The energies and broadening parameters of the E1 and E1+Δ1 transitions as a function of Al composition were also examined based on the second-derivative spectra of the dielectric function. The comparison between the results and the reported data is presented. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360624
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8367-8370 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual strain, crystallographic tilt, and surface topography of InxGa1−xAs and InxAl1−xAs (0〈x〈0.3) epilayers grown on GaAs substrates are investigated. The residual strain of the InxAl1−xAs grown on graded InyAl1−yAs is shown to be strongly dependent on the thickness of the underlying-graded buffer layers and is larger than that of the InGaAs of the same structure. The crystallographic tilt of the InGaAs epilayers with respect to GaAs substrate is found to be strongly dependent on the growth temperature as well as the layer structure of the underlying buffer layer, while that of InAlAs is insensitive to these two factors. This behavior is attributed to the different roughness of the growth front between these two material systems and is consistent with the observation by atomic force microscopy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362555
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    High-speed GaAs metal-semiconductor-metal photodetectors with recessed metal electrodes (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 245-247 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The GaAs metal-semiconductor-metal photodetector (MSM-PD) with recessed metal electrodes have been fabricated and characterized. The recessed structure allows very short photocarrier sweep-out time because of both a strengthened electric field in the active region and a shortened distance for the photocarriers to reach the electrodes. Improved high-speed performance and enhanced peak amplitude in the temporal response can thus be obtained simultaneously. There is about a 60% and 50% improvement in the fall time and peak amplitude of the temporal response at 5 V bias over the conventional device, respectively. The measured results also show that high-speed operation can be achieved at a lower bias voltage for the GaAs MSM-PD with recessed metal electrodes as compared to the conventional one. Two-dimensional simulation was carried out to give an insight into the operation principle of this device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117938
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...