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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4349-4353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemistry of the (NH4)2Sx-treated n-GaAs (100) surfaces has been studied using synchrotron radiation photoemission spectroscopy. Ga 3d, As 3d, and S 2p photoemission spectra are measured before and after annealing in vacuum with a photon energy of about 210 eV, where S 2p core level spectra can be sensitively detected. It is found that Ga-S, As-S, and S-S bonds are formed on the as-treated GaAs surfaces, and that stable Ga-S bonds become dominant after annealing at 360 °C for 10 min in vacuum. The thickness of the surface sulfide layer is reduced from about 0.5 to 0.3 nm by annealing. The surface Fermi- level position of the as-treated surfaces is determined to be about 0.8 eV below the conduction band minimum, which is about 0.1 eV closer to the valence band maximum than that of the untreated surfaces. A Fermi-level shift of 0.3 eV toward a flat band condition is also observed after annealing. It is found that the Ga-S bonding plays an important role in passivating GaAs surfaces.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 460-462 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: At various Ce(IV)/DPP (DPP: diphenyl phosphate) molar ratios, the structure of Ce clusters in aqueous solutions was studied by extended x-ray absorption fine structure measurements. Although the Ce–Ce bond was strong in the absence of DPP, the corresponding signal was significantly reduced when the Ce(IV)/DPP molar ratio was 1. The result indicates the existence of a strong interaction between Ce(IV) ions and DPP, and suggests the formation of a Ce–DPP structure in solution. With an increase in the molar ratio, the signal of Ce–Ce bonds increased again, and exceeded that observed in the absence of DPP, suggesting the formation of a Ce–Ce–DPP structure. Ce(IV) ions in the complexes were found to have ∼0.67 4f electrons. On the other hand, no measurable charge transfer was observed in the case of Ce(III) ions. These results demonstrate the role of the 4f orbital of Ce(IV) ions for its enormous activity for DNA hydrolysis. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 607-609 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An Se-passivated GaAs(001) surface was found to be stabilized by 2×3 reconstruction, previously reported as an intermediate structure, under the condition of a low Se chemical potential. Ordered elliptical protrusions with ∼0.6-nm periodicity in the [110] direction were observed by scanning tunneling microscopy, the structure of which was in good agreement with a double-layered dimer model. A comprehensive model to explain the 2×3 structure together with the formation of a Ga2Se3-like structure with ordered 1/3 ML Ga vacancies was proposed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3468-3470 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Remarkably low electron density of Si adatoms at the Si(111)-7×7 phase boundary was found by scanning tunneling microscopy. The observed charge transfer was apparent with sample bias voltages down to ∼−0.8 eV, close to the value of the dangling bond state of the rest atoms in the Si(111) 7×7 surface. In consideration of the DAS (dimer-adatom-stacking fault) model, the observed charge transfer could be related to the structural change in the dimer layer caused by phase mismatching at the boundary. In fact, such charge transfer was not observed at the less disordered boundaries formed by introducing 5×5 half unit cells. Similar large charge transfer was found to occur in the quenched disordered 1×1 structure. These results agree with the similar chemical reactivity observed in the two disordered structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3278-3280 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of tetrathiafulvanene–tetracyanoquinodimethane (TTF-TCNQ) grown on mica substrates by vacuum deposition were studied by scanning tunneling microscopy (STM). STM images displayed the usual arrangement of alternative TTF and TCNQ columns aligned parallel to the crystal b axis. However, in addition to the same phase as that of a TTF-TCNQ bulk crystal, a new phase is observed. In this new phase the tilt angles the TCNQ and TTF molecular planes make with the a×b axis are different from those observed in the normal phase. This new phase can be explained by the introduction of a stacking fault on the surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1433-1435 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structures of the complexes of diphenyl phosphate (DPP), a model compound of DNA, with lanthanide ions have been investigated to shed light on the mechanism of the cerium (IV)-induced nonenzymatic hydrolysis of DNA. Binding energies of the P 2p core level of DPP were 134.2 eV for the complexes with La(III), Eu(III), and Lu(III), and was 134.4 eV for the Ce(IV) complex, when the metal/DPP molar ratio was 1:1. When the molar ratio was increased, only Ce(IV), the most active metal ion for DNA hydrolysis, showed a chemical shift of ∼0.5 eV toward the higher binding energy region. The chemical shift of ∼0.5 eV toward the higher binding energy region. The chemical shift was due to the systematic increase in the intensity of the higher binding energy component. The observed change in the electronic structure of the DPP-Ce(IV) complex may be related to the superb ability of Ce(IV) for the hydrolysis of DNA. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 643-645 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: β-cyclodextrin molecules modified with lipoamide residue (LP-β-CyD) were self-assembled on an Au(111) surface in ethanol solution, and the growth process was studied by scanning tunneling microscopy. At the initial stage, adsorption sites were not only random, but also partially linear ordering, which suggests the existence of some influence by the herringbone structure of the Au(111) surface. According to the macroscopic analysis, the subsequent growth process was explained by the Elovich model, which is based on the repulsive interaction between adsorbed molecules. However, when the immersion time increased, island structures began forming. This result suggests the interaction between LP-β-CyD molecules as attractive, which in fact is more probable in consideration of the possibility of the hydrophobic and the hydrogen bonding interactions between CyD molecules. Finally, formation of a single LP-β-CyD layer was clearly confirmed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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