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  • 1
    Electronic Resource
    Electronic Resource
    Dependence of the cathodoluminescence of diamond films on deposition temperature (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 6036-6038 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition temperature dependence of the cathodoluminescence (CL) of diamond thin films grown by microwave plasma-assisted chemical vapor deposition has been investigated. Depositions were made in the temperature range of 400 to 750 °C at a pressure of 10 Torr, with a gas mixture of 5% CH4 and 5% O2 in hydrogen. The intensity of the luminescent peak at 430 nm was used as a measure of diamond quality for the film. This peak was found to be a maximum above 600 °C. Examination of the intensities of CL emissions associated with nitrogen and silicon impurities at 530, 560, and 740 nm indicate incorporation of these impurities is more efficient at temperatures above 600 °C. Film quality was thus found to be an optimization of competing mechanisms, i.e., improvement of diamond quality as evidenced by the intensity of the 430 nm peak, with the apparent activation of impurities and vacancy defects at elevated temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350460
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Deposition of diamondlike films by electron cyclotron resonance microwave plasmas (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 62-65 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hard a-C:H films have been deposited through electron cyclotron resonance (ECR) microwave plasma decomposition of CH4 diluted with H2 gas. It has been found that hard diamondlike films could only be produced under a rf-induced negative self-bias of the substrate stage. Raman spectra indicate the deposition of two distinct film types: one film type exhibiting well-defined bands at 1360 and 1580 cm−1 (the graphitic D and G bands) and another displaying a broad Raman peak centered at approximately 1500 cm−1. The optical gaps of these films are from 1.0 to 1.6 eV, respectively, with resistivities 〉1012 Ω cm. Variation of the mirror magnetic-field profile of the ECR system was examined, demonstrating the manipulation of film morphology through the extraction of different ion energies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347094
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Diagnostics of silane and germane radio frequency plasmas by coherent anti-Stokes Raman spectroscopy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2022-2024 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In situ plasma diagnostics using coherent anti-Stokes Raman spectroscopy have shown different dissociation characteristics for GeH4 and SiH4 in radio frequency (rf) plasma-enhanced chemical vapor deposition of amorphous silicon germanium alloy (a-SiGe:H) thin films. The GeH4 dissociation rate in rf plasmas is a factor of about 3 larger than that of SiH4. Plasma diagnostics have revealed that the hydrogen dilution of the SiH4 and GeH4 mixed plasma plays a critical role in suppressing the gas phase polymerization and enhancing the GeH4 dissociation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99746
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Thermoelectric thin-film high-temperature measurements by computer control (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 276-284 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper describes the design and performance of a novel automated apparatus for measuring the Seebeck coefficient (S) and the electrical conductivity (σ) of thin-film thermoelectric materials continuously over the temperature range of 20 to 1000 °C. An inert substrate coated with a thin film thermoelectric material is increased and decreased in temperature at a predetermined rate set by program control while maintaining a constant temperature gradient across the sample. A fully automated computer data acquisition system is used to control instrumentation, measurements, and data storage. This approach is particularly useful for studying the transition from amorphous to crystalline structure in the semiconducting materials. Thin-film thermoelectric materials were prepared by magnetron sputtering and rf glow discharge. Parameters S and σ were measured as a function of temperature, histology, type, and amount of doping. Materials studied had the compositions Bi2Te3, GeTe, Ge80Te20, PbTe, and S.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138930
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    Paper (German National Licenses)
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