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  • 1
    Electronic Resource
    Electronic Resource
    Spontaneous photon-emission spectrum of tunneling electrons in a double-barrier structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1025-1027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spontaneous photon-emission spectrum of an electron tunneling through a semiconductor double-barrier structure is calculated using the Green's-function approach. The peak photon-emission power of 10−7 W per well can be achieved for an injected current of 50 mA. Our results are consistent with the measured value of 10−9 W per well by Helm et al. [Phys. Rev. Lett. 63, 74 (1989)] when the nonradiative process and other factors are taken into account.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349684
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  • 2
    Electronic Resource
    Electronic Resource
    Density of states in semiconductor nanostructures (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6484-6487 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of electronic states is directly counted in energy space for semiconductor nanostructures in which electrons are confined in all three dimensions. The results for different degrees of confinements in three directions are compared with that calculated in momentum space when momenta are assumed to be good quantum numbers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348855
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  • 3
    Electronic Resource
    Electronic Resource
    Resonant level lifetime in GaAs-AlAs double-barrier structures including Γ-X mixing (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8387-8391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative model for calculation of the lifetime of quasibound states, including the Γ-X transfer, in a AlAs-GaAs-AlAs double-barrier structure is presented. When device is designed that a Γ-like energy level approaches to an X-like energy level, anticrossing of the Γ-X transition occurs and the lifetime of the state can be several orders larger than that of a pure Γ system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348923
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  • 4
    Electronic Resource
    Electronic Resource
    Barrier potential design criteria in multiple-quantum-well-based solar-cell structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5533-5537 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The barrier potential design criteria in multiple-quantum-well (MQW) -based solar-cell structures is reported for the purpose of achieving maximum efficiency. The time-dependent short-circuit current density at the collector side of various MQW solar-cell structures under resonant condition was numerically calculated using the time-dependent Schrödinger equation. The energy efficiency of solar cells based on InAs/GayIn1−yAs and GaAs/AlxGa1−xAs MQW structures were compared when carriers are excited at a particular solar-energy band. Using InAs/GayIn1−yAs MQW structures it is found that a maximum energy efficiency can be achieved if the structure is designed with barrier potential of about 450 meV. The efficiency is found to decline linearly as the barrier potential increases for GaAs/AlxGa1−xAs MQW-structure-based solar cells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357155
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  • 5
    Electronic Resource
    Electronic Resource
    Dynamics of recombination-enhanced defect reaction in a ZnCdSe single quantum well (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1541-1543 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature photoluminescence spectra from a ZnCdSe single quantum well have been measured as a function of time in a minute time scale under several photoexcitation levels (4–40 W/cm2). Spectrally integrated photoluminescence intensity increases as the measurement time increases and reaches a maximum level that is 37 times higher than the initial intensity. We attribute this dynamical behavior to recombination-enhanced defect reactions in the vicinities of point defects. These reactions reduce the density of point defects and enhance radiation quantum efficiency. A new point defect reduction rate was discovered to fit our experimental data. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122199
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  • 6
    Electronic Resource
    Electronic Resource
    A concept for nonvolatile memories (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2487-2489 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A concept for nonvolatile memories is proposed in which a unique combination of a Schottky junction with tunable barrier height and an adjacent electron potential well is used. A proof-of-concept demonstration is given for such a class of memory devices using ZnCdMgSe/InP heterostructures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120096
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  • 7
    Electronic Resource
    Electronic Resource
    Picosecond hole dynamics in GaAs grown on silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2328-2330 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Picosecond hole dynamics in GaAs grown on silicon substrate are reported for the first time using time- and energy-resolved photoluminescence spectroscopy. The emission spectrum is attributed to transitions from electrons in donor (Si, 1016 cm−3) states to the internal stress separated heavy hole and light hole bands [(D°→hh), (D°→lh)]. The intraband thermalization process for heavy holes is observed to be faster than for light holes. The intervalence-band thermalization time of holes is found to be about 11 ps. The hole cooling rate is measured to be six times smaller than expected based on hole scatterings with longitudinal optical phonons.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102909
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  • 8
    Electronic Resource
    Electronic Resource
    Electron-hole recombination lifetimes in a quasi-zero-dimensional electron system in CdSxSe1−x (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1839-1841 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The recombination lifetimes for the radial and angular quantum number conserved 1S–1S and 1P–1P transitions from three-dimensionally confined electrons in CdSxSe1−x were measured by time-resolved photoluminescence (PL). The assignment of the observed transitions was supported by calculations of eigen energy levels and squared matrix element ratio for these transitions as well as well-resolved PL peaks arising from 1S–1S and 1P–1P transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98487
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  • 9
    Electronic Resource
    Electronic Resource
    Piezospectroscopy of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2651-2653 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of large external stress (S) along [100] on the optical features associated with biaxially strained bulk GaAs and two GaAs/GaAlAs single quantum wells (SQWs) grown on (001) Si have been observed using photoreflectance at 300 K. This stress configuration makes it possible to externally alter the light (LH)- and heavy (HH)-hole splitting in both the bulk material and the SQWs. In a SQW of width 200 A(ring), the ground state was continuously tuned from LH to HH. In the bulk material, a stress-induced anticrossing of the LH and HH features of the fundamental gap was determined with an interesting polarization effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106884
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  • 10
    Electronic Resource
    Electronic Resource
    Dislocation-related photoluminescence peak shift due to atomic interdiffusion in SiGe/Si (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-temperature photoluminescence (PL) spectroscopy was used to study electronic states associated with threading dislocations (D lines) in strain-relaxed Si1−xGex layers. The structures investigated were grown by ultrahigh vacuum chemical vapor deposition at 550 °C and consist of a Si(001) substrate, followed by a stepwise graded buffer layer, followed by a thick uniform composition Si1−xGex layer. The PL peak positions of the four D lines after isochronal annealing at temperatures between 600 and 800 °C were measured. We show that the large energy shift of the D1 line is due to a change in the local band gap energy at the dislocation core due to strain-driven diffusion of Ge atoms away from the dislocation core with an activation energy Ea, which varies with Ge mole fraction x. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119732
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