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  • 1
    Digitale Medien
    Digitale Medien
    Laser beam interference effects on the photovoltage of a p-n junction diode (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5459-5463 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The photovoltage developed by a p-n junction diode illuminated by an interference pattern through a slit depends both on the distance between fringes and the phase of the interference pattern relative to the position of the slit. For a slit width which accommodates an integer number N of fringes, the voltage is independent of the phase of the pattern but this is no longer the case for a noninteger number of fringes. The maximum dependence is observed for N+1/2 fringes within the slit but the effect decreases as N increases. When the fringe distance is no longer negligible compared to the minority carrier diffusion length the dependence of the photovoltage on the number of fringes becomes more pronounced. A theory is presented which shows how the diffusion length can be obtained from the experimental data. Experiments on GaAs and Si diodes are reported. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.362735
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  • 2
    Digitale Medien
    Digitale Medien
    Polar optical-phonon scattering in three- and two-dimensional electron gases (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 657-660 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The concept of the polar optical momentum relaxation time for phonon energies larger than the thermal energy is applied to the analytical calculations of the electron mobility in bulk GaAs and in a two-dimensional (2D) electron gas. The theory also accounts for nonparabolicity. For the bulk material, the analytical formula is in good agreement with experimental data even at elevated temperatures where it can be used as an extrapolation formula. The comparison with numerical simulations for the 2D gas shows that the analytical formula for the 2D case applies when intersubband scattering is unimportant. When many subbands are involved in scattering processes, the polar optical mobility can be estimated using the analytical formula for the bulk case. Hence the results provide convenient analytical equations for polar optical mobility which can be used in device simulators. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359051
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  • 3
    Digitale Medien
    Digitale Medien
    Current-voltage characteristics of strained piezoelectric structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1616-1620 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Experimental and theoretical studies are presented of the current-voltage characteristics of symmetrically doped n-type GaN-AlN-GaN semiconductor-insulator-semiconductor (SIS) structures. The asymmetry caused by the strain-induced electric field leads to the depletion layer barrier in addition to the barrier presented by a thin insulating layer of AlN. It is shown that the tunnel current depends on the degree of the elastic strain relaxation which, in turn, is related to the AlN film thickness. This dependence provides quantitative information about the film relaxation. This characterization technique is compared with the capacitance-voltage characterization of the SIS structures. The data indicate that the low bound of the conduction-band offset for the AlN/GaN heterointerface is close to 1 eV. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.358916
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  • 4
    Digitale Medien
    Digitale Medien
    Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3691-3696 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We calculated the elastic strain relaxation in wurtzite GaN–AlN–GaN semiconductor–insulator–semiconductor (SIS) structures. Elastic strain tensor components, elastic energy, the density of the misfit dislocations, and the other parameters of the system were obtained as functions of the AlN layer thickness. Theoretical values of the elastic strain relaxation are in satisfactory agreement with experimental data extracted from the capacitance-voltage (C-V) characteristics of GaN–AlN–GaN SIS structures. Our results confirm that the gradual relaxation process starts from 30 A(ring) AlN film thickness. The uniform contributions to the elastic strain tensor components decrease by approximately an order of magnitude when the film thickness increases from 30 to 100 A(ring). Commensurate with this decrease is an increase in a nonuniform contribution of the misfit dislocations. The dislocation interactions lead to redistribution of dislocations within the 30–60 A(ring) range of AlN film thicknesses. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359947
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  • 5
    Digitale Medien
    Digitale Medien
    Hall factor for ionized impurity scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2846-2847 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We propose an interpolation formula which describes the dependence of the Hall factor for impurity scattering in semiconductors on the carrier concentration and temperature with sufficient accuracy for practical calculations. This formula applies to semiconductors with an arbitrary degree of degeneracy which makes it especially useful for the interpretation of the measured temperature dependencies of a Hall mobility. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.360085
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  • 6
    Digitale Medien
    Digitale Medien
    A new analytical model for heterostructure field-effect transistors (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2116-2120 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We describe a new analytical model for heterostructure field-effect transistors. This model is based on detailed consideration of different forces acting on carriers in a two-dimensional gas and on the analysis of the difference between the electric potential and electron quasi-Fermi level. We also propose an approximate analytical model that takes into account the velocity saturation in the channel. This model incorporates an arbitrary dependence of the carrier concentration in the channel on the gate voltage. The obtained results are in good agreement with experimental data for n-channel heterostructure insulated gate field-effect transistors. Similar analytical models can also be developed for other devices such as p-channel transistors, superlattice field-effect transistors, and quantum well field-effect transistors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342859
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  • 7
    Digitale Medien
    Digitale Medien
    Gate current of modulation-doped field-effect transistors (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 1541-1546 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present a new room-temperature model for modulation-doped field-effect transistors and heterojunction insulated gate field-effect transistors that accounts for effects induced by the gate current at large gate voltages. For large gate currents the quasi-Fermi levels in the GaAs channel and the AlGaAs barrier layers are different because of the limited electron exchange imposed by the heterojunction band offset. As a consequence, the channel electron concentration for large gate voltages exceeds the value expected for the n-AlGaAs/GaAs material system in thermal equilibrium. The channel electron capacitance can have two peaks as a function of gate voltage leading to similar structure in the gate voltage dependence of the transconductance. We find good agreement between our calculated and measured gate currents as a function of the gate voltage.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.341830
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  • 8
    Digitale Medien
    Digitale Medien
    Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 310-314 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3. Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1372364
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  • 9
    Digitale Medien
    Digitale Medien
    Piezoresistive effect in AlN/GaN short range superlattice structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6932-6934 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We report on a strong piezoresistive effect in AlN–GaN short-range superlattices. The measured static gauge factor varies from 30 to approximately 90 depending on the superlattice composition. These values are substantially larger than the values of the gauge factor reported for GaN–AlN–GaN semiconductor–insulator–semiconductor structures. The measured data are in good agreement with the results of the calculation accounting for the piezoelectric effect. Our results demonstrate a high potential of AlN–GaN-based materials for the development of piezoelectric and piezoresistive sensors. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.370109
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  • 10
    Digitale Medien
    Digitale Medien
    Amplification of bipolar current flow by charge induced from an insulated gate electrode (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1108-1111 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present the results of a two-dimensional simulation of the amplification of an ambipolar current flow in a four-terminal crystalline silicon device by charge induced into this flow from an insulated gate electrode. We show that although a bipolar current flow in a crystalline device can indeed be modulated by a gate field, the magnitude of this modulation is less than in amorphous silicon double-injection field-effect transistors. Our proposed structure also has an interesting feature in that the gate field redistributes the current flow between its terminals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.339717
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