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  • 1
    Electronic Resource
    Electronic Resource
    Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6726-6730 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the gate leakage current fluctuations on noise properties of AlGaN/GaN heterostructure field effect transistors (HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs). The comparison of the noise properties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate current noise to the HFET's output noise. The effect of the gate current fluctuations on output noise properties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a relatively large leakage current Ig (Ig/Id∼10−3–10−2, where Id is the drain current) does not contribute much to the output noise. In HFETs with a relatively small values of α (α∼10−5–10−4), the contribution of the leakage current to output noise can be significant even at Ig/Id∼10−4–10−3. For such transistors, a very rapid increase of the 1/f noise with gate bias was observed. The differences in the noise behavior can be linked to the material quality of the AlGaN and GaN layers in different types of HFETs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321790
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  • 2
    Electronic Resource
    Electronic Resource
    Piezoresistive effect in AlN/GaN short range superlattice structures (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6932-6934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a strong piezoresistive effect in AlN–GaN short-range superlattices. The measured static gauge factor varies from 30 to approximately 90 depending on the superlattice composition. These values are substantially larger than the values of the gauge factor reported for GaN–AlN–GaN semiconductor–insulator–semiconductor structures. The measured data are in good agreement with the results of the calculation accounting for the piezoelectric effect. Our results demonstrate a high potential of AlN–GaN-based materials for the development of piezoelectric and piezoresistive sensors. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370109
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  • 3
    Electronic Resource
    Electronic Resource
    1/f noise in pentacene organic thin film transistors (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5395-5399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the flicker (1/f ) noise in pentacene organic thin film transistors (TFTs) of different designs. Our studies show that the TFT design affects the noise level and the noise dependence on the gate- and drain-source biases. The measured noise level was the lowest for the TFTs with a top source and drain contacts design. For these devices, the noise dependence at low drain current values resembled that for n-type crystalline Si metal–oxide–semiconductor field-effect transistors. The extracted Hooge parameter α, which allows comparing the noise level in different devices and materials, was 0.045 for the top-contact TFTs. This parameter value is several orders of magnitude lower than that for conducting polymers and only several times higher than that for hydrogenated amorphous Si (α-Si:H) TFTs. The bottom source and drain contacts TFTs had a much higher noise level with a noise dependence on the terminal voltages that differed from the noise voltage dependence for the top-contact TFTs. The Hooge parameter values were in the range of 5–20 for the bottom-contact TFTs. We estimated that the contact noise could be comparable to the channel noise for both top-contact and bottom-contact TFTs. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1314618
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  • 4
    Electronic Resource
    Electronic Resource
    Modeling of organic thin film transistors of different designs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6594-6597 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on modeling of direct current (DC) characteristics of organic pentacene thin film transistors of different designs. Our model incorporates a gate-voltage dependent mobility and highly nonlinear drain and source contact series resistances. The contact nonlinearities are especially pronounced in bottom source and drain contact thin film transistors. The model successfully reproduced both below- and above-threshold characteristics of top source and drain contact and bottom source and drain contact organic pentacene thin film transistors. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323534
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  • 5
    Electronic Resource
    Electronic Resource
    Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 310-314 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3. Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372364
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  • 6
    Electronic Resource
    Electronic Resource
    Elastic strain relaxation in GaN–AlN–GaN semiconductor–insulator–semiconductor structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3691-3696 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculated the elastic strain relaxation in wurtzite GaN–AlN–GaN semiconductor–insulator–semiconductor (SIS) structures. Elastic strain tensor components, elastic energy, the density of the misfit dislocations, and the other parameters of the system were obtained as functions of the AlN layer thickness. Theoretical values of the elastic strain relaxation are in satisfactory agreement with experimental data extracted from the capacitance-voltage (C-V) characteristics of GaN–AlN–GaN SIS structures. Our results confirm that the gradual relaxation process starts from 30 A(ring) AlN film thickness. The uniform contributions to the elastic strain tensor components decrease by approximately an order of magnitude when the film thickness increases from 30 to 100 A(ring). Commensurate with this decrease is an increase in a nonuniform contribution of the misfit dislocations. The dislocation interactions lead to redistribution of dislocations within the 30–60 A(ring) range of AlN film thicknesses. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359947
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  • 7
    Electronic Resource
    Electronic Resource
    Hall factor for ionized impurity scattering (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2846-2847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose an interpolation formula which describes the dependence of the Hall factor for impurity scattering in semiconductors on the carrier concentration and temperature with sufficient accuracy for practical calculations. This formula applies to semiconductors with an arbitrary degree of degeneracy which makes it especially useful for the interpretation of the measured temperature dependencies of a Hall mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360085
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  • 8
    Electronic Resource
    Electronic Resource
    Elastic strain relaxation and piezoeffect in GaN-AlN, GaN-AlGaN and GaN-InGaN superlattices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 6332-6338 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculated the elastic strain relaxation in (GaN)n-(AlN)n, (GaN)n(AlxGa1−xN)n and (GaN)n(InxGa1−xN)n superlattices where n is the number of layers in the superlattice cell. This calculation and a similar calculation for a semiconductor–insulator–semiconductor structure allowed us to determine the lower and upper bounds for the elastic strain relaxation in (GaN)m(AlN)n superlattices with arbitrary n/m ratios, i.e., we determine a full range of the critical thicknesses for GaNm(AlN)n superlattices. The obtained theoretical results can also be applied to other superlattices based on III nitrides and their solid solutions. Our theory agrees with the experimental data for GaN-AlN superlattices. Also, we show that the piezoelectric effect may cause a large shift of the absorption edge in defect-free GaNm(AlxGa1−xN)n superlattices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364368
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  • 9
    Electronic Resource
    Electronic Resource
    Enhancement of Schottky barrier height in heterodimensional metal-semiconductor contacts (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 441-442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the measurements of the heterodimensional Schottky barrier height in two-dimensional metal-semiconductor field effect transistors (2D MESFETs). Our experimental data indicate approximately 0.1 eV greater barrier height compared to conventional metal-semiconductor contacts of the same materials. The enhancement is explained in terms of two effects—quantization of energy levels of the carriers in the quantum well and broadening of the corresponding wave functions. The increased barrier height leads to a substantial reduction of the gate leakage current in 2D MESFETs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118175
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  • 10
    Electronic Resource
    Electronic Resource
    High transconductance heterostructure field-effect transistors based on AlGaN/GaN (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 794-796 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117894
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