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  • 1
    Electronic Resource
    Electronic Resource
    Addendum: "Reverse-field reciprocity for conducting specimens in magnetic fields'' [J. Appl. Phys. 61, 1079 (1987)] (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 323-323 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339155
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  • 2
    Electronic Resource
    Electronic Resource
    Reverse-field reciprocity for conducting specimens in magnetic fields (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1079-1084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new static-electromagnetic reciprocity principle is presented, extending ordinary resistive reciprocity to the case of nonzero magnetic fields by requiring the magnetic field to be reversed when the reciprocal measurement is made. The principle is supported by measurements on various types of specimens, including those which exhibit the quantum-Hall effect. A derivation using elementary electromagnetic theory shows that the principle will hold provided only that the specimen is electrically linear (Ohmic), and that the Onsager form for the conductivity tensor applies throughout. The principle has important implications for electrical measurements on semiconductors in applied-magnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.338202
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  • 3
    Electronic Resource
    Electronic Resource
    Hall effect in amorphous Si:H and amorphous Si:H/amorphous Ge:H superlattices (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1074-1076 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The sign anomaly in the Hall coefficient observed in substitutionally doped amorphous Si:H and amorphous Ge:H is also found in amorphous Si:H/Ge:H superlattices. The size of the Hall mobility in the superlattice is comparable to the Hall mobility in amorphous Si:H and amorphous Ge:H.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99215
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  • 4
    Electronic Resource
    Electronic Resource
    The Righi-Leduc effect in superconductors (1976)
    Springer
    Journal of low temperature physics 24 (1976), S. 145-154 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We report observation of the Righi-Leduc effect in the mixed and intermediate states of superconducting alloys of Pb with In, Bi, Sn, and Bi plus Tl and alloys of In with Pb, Cd, and Bi. The tangent of the Righi-Leduc angle, tan θ, as a function of applied fieldH undergoes an abrupt change atH c2 . In many cases, the sign of the Righi-Leduc angle reverses atH c2 . We suggest that the circulating diamagnetic current that flows through a temperature gradient may give a contribution to the Righi-Leduc effect that is observed in the experiments reported here.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00659202
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  • 5
    Electronic Resource
    Electronic Resource
    Righi-Leduc effect in the mixed state of a type-II superconductor (1970)
    Springer
    Journal of low temperature physics 3 (1970), S. 635-638 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A transverse temperature gradient odd in magnetic field has been observed in the presence of longitudinal temperature gradient in a thin strip of Pb + 7.5 at. % In with its plane perpendicular to the field. At 2.5°K, the ratio of the transverse to the longitudinal temperature gradient is proportional to field above the upper critical field, and has a maximum in the mixed state below this field. The Righi-Leduc effect has the same sign in the mixed state as in the normal state.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00628339
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal conductance of layer structure dichalcogenides (1974)
    Springer
    Journal of low temperature physics 16 (1974), S. 229-235 
    Details
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We have measured the thermal conductance in the temperature range 0.5–7 K of the layer structure compounds TaS1.6Se0.4 and TaS1.6Se0.4 (pyridine)1/2 parallel to the plane of the layers in both the normal and superconducting states. Our results indicate that the phonon contribution to the thermal conductivity, which varies approximately asT 1.6 at low temperatures, dominates the electronic contribution in both the normal and superconducting phases.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00655317
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical properties of polyacetylene/polybutadiene blends (1985)
    New York : Wiley-Blackwell
    Journal of Polymer Science: Polymer Physics Edition 23 (1985), S. 1629-1636 
    Details
    ISSN: 0098-1273
    Keywords: Physics ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Microstructural Composites of polyacetylene/polybutadiene blends were prepared by polymerizing polyacetylene in a matrix of polybutadiene. The polyacetylene in the blends can be doped with iodine to produce electrically conducting composites. Thus a new material is formed which retains many of the electrical properties of doped polyacetylene but whose mechanical properties are different from those of either polyacetylene or polybutadiene.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/pol.1985.180230814
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